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The MCH6534-TL-E is a dual NPN bipolar junction transistor (BJT) array manufactured by onsemi. It features a silicon technology base and is housed in an MCPH-6 surface-mount package. The device supports a maximum collector-emitter voltage of 15 V and an emitter-base voltage of 5 V. Continuous collector current reaches 700 mA, with a power dissipation rating of 500 mW. The minimum DC current gain (hFE) is specified at 300. This component is designed for compact circuit applications requiring dual NPN configurations.
Verify the active status of this component before integration, as it may be subject to discontinuation notices. Confirm that the MCPH-6 footprint matches your PCB layout requirements. Ensure that thermal management strategies align with the 500 mW power dissipation limit under expected operating conditions. Cross-reference datasheet revisions to guarantee parameter consistency.
Select this part when a dual NPN BJT structure is required in a small form factor. The 15 V breakdown voltage limits suitability for high-voltage applications. Compare the 700 mA current capacity against load requirements. Consider the MCPH-6 package dimensions during mechanical design. Verify hFE specifications meet circuit gain requirements.
This component belongs to the MCH6534 series of dual bipolar transistors from onsemi. It shares the MCPH-6 package format with other devices in the family, such as the MCH6203-TL-E, though electrical ratings differ significantly. The series targets space-constrained designs requiring multiple transistor functions in a single footprint.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative dual NPN arrays based on pinout and electrical parameters.