MCH6541-TL-E

Overview

The MCH6541-TL-E is a dual bipolar junction transistor (BJT) array manufactured by onsemi, featuring one NPN and one PNP transistor within a single 6-MCPH surface-mount package. It supports a maximum collector current of 700 mA and a collector-emitter breakdown voltage of 30 V. The device exhibits high-frequency performance with transition frequencies of 540 MHz for the NPN section and 520 MHz for the PNP section. Power dissipation is rated at 550 mW, and the unit operates at junction temperatures up to +150°C. DC current gain ranges from 200 to 800 depending on bias conditions.

Feature Summary

• Integrated complementary NPN/PNP configuration in a compact footprint
• High-speed switching capability suitable for RF applications
• Surface-mount design optimized for automated assembly

Applications

• RF signal processing circuits
• High-speed switching logic interfaces
• Complementary amplifier stages

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official datasheets. Check for obsolescence notices as availability may be limited. Ensure storage conditions meet moisture sensitivity level requirements prior to soldering.

Selection Notes

Select this component when a matched NPN/PNP pair is required in a minimal footprint. Evaluate thermal management needs against the 550 mW power dissipation limit. Compare transition frequencies against circuit speed requirements to ensure adequate bandwidth for the specific application frequency.

Part Context

This part belongs to the MCH6541 series of dual BJT arrays. It shares the 6-MCPH package form factor with other onsemi discrete transistors but is distinct from MOSFET variants like the MCH6337 or unrelated comparator families such as the MCP6541.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pin compatibility and electrical parameters before considering alternative manufacturers.