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The MCH6542-TL-E is a composite bipolar junction transistor (BJT) array containing one PNP and one NPN epitaxial planar silicon transistor within a single MCPH-6 surface-mount package. It supports a maximum collector current of 300 mA and a collector-to-emitter voltage of 30 V for both polarities. The device features a gain-bandwidth product of 380 MHz and a total power dissipation rating of 550 mW at 25°C on a ceramic board. It operates with a junction temperature up to 150°C and includes specific saturation voltage characteristics for efficient switching.
Verify the component status as End-of-Life (EOL) through official manufacturer channels or authorized distributors before design finalization. Confirm that the MCPH-6 package dimensions align with the target PCB footprint. Ensure compliance with RoHS directives if required by the application environment. Review the datasheet for absolute maximum ratings to prevent overstress during operation.
Select this component when space constraints require a dual-transistor solution in an ultrasmall SMD format. Evaluate the 300 mA continuous current limit against peak load requirements. Consider the 380 MHz transition frequency for high-speed switching needs. Verify thermal management capabilities, as the 550 mW dissipation rating depends on specific board mounting conditions.
This part belongs to the MCH65 series of composite transistors manufactured originally by Sanyo Semiconductor, now under onsemi. The series focuses on providing integrated push-pull configurations in minimal footprints. The MCH6542 specifically pairs a PNP and NPN transistor for complementary switching tasks.
Public confirmed substitute part numbers are not available in the provided documentation. Due to the EOL status, alternative sourcing may require checking secondary market suppliers or evaluating pin-compatible alternatives from other manufacturers.