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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8DFN
- Series:-
- Mfr:Microchip Technology
- Package:Tape & Reel (TR)
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply:4.5V ~ 18V
- Logic Voltage - VIL, VIH:0.8V, 2.4V
- Current - Peak Output (Source, Sink):4.5A, 4.5A
- Input Type:Inverting, Non-Inverting
- Rise / Fall Time (Typ):15ns, 18ns
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-VDFN Exposed Pad
- Supplier Device Package:8-DFN-S (6x5)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The MCP1405T-E/MF is a low-side gate driver IC manufactured by Microchip Technology, designed for driving power MOSFETs. It features dual outputs providing both inverting and non-inverting signals from a single input. The device operates within a supply voltage range of 4.5 V to 18 V and delivers a peak output current of 4.5 A. It utilizes an 8-lead DFN-S (6x5 mm) package with an exposed pad for thermal management. The component supports CMOS and TTL logic inputs and functions reliably across an operating temperature range of -40°C to +125°C.
Feature Summary
- Dual-channel architecture delivering simultaneous inverting and non-inverting drive signals
- High peak output current capability for rapid MOSFET switching
- Exposed pad design on the DFN-S package for enhanced thermal dissipation
- Compatibility with standard CMOS and TTL logic input levels
Applications
- Low-side switching in DC-DC converter topologies
- Motor control circuits requiring isolated or differential drive signals
- Power management modules utilizing high-speed MOSFET arrays
Procurement Notes
Verify the specific suffix 'MF' corresponds to the 8-lead DFN-S (6x5 mm) package configuration during sourcing. Confirm that the application circuit accommodates the exposed pad connection requirements for proper grounding and thermal performance. Ensure supply voltage limits are respected to maintain device integrity.
Selection Notes
Select this component when dual complementary drive signals are required from a single control line without external inversion circuitry. The 4.5 A peak current rating suits medium-power applications. The wide operating temperature range makes it suitable for industrial environments where thermal stability is critical for consistent switching performance.
Part Context
This part belongs to the MCP1405 series of dual MOSFET drivers. It shares functional similarities with other variants like the MCP1405T-E/SO but differs in packaging and pinout. The series is categorized under PMIC gate drivers, focusing on efficient power stage control for various electronic systems.
FAQ
Does the MCP1405T-E/MF provide galvanic isolation?
No, the MCP1405T-E/MF is a low-side driver without internal galvanic isolation. It requires external isolation components if isolation between the control side and the power side is necessary.
What is the maximum supply voltage for this device?
The maximum recommended supply voltage for the MCP1405T-E/MF is 18 V. Operation beyond this limit may damage the device.
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