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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8SOIC
- Series:-
- Mfr:Microchip Technology
- Package:Tube
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT
- Voltage - Supply:4.5V ~ 18V
- Logic Voltage - VIL, VIH:0.8V, 2V
- Current - Peak Output (Source, Sink):3A, 3A
- Input Type:Inverting, Non-Inverting
- Rise / Fall Time (Typ):12ns, 12ns
- Operating Temperature:-40°C ~ 125°C
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:AEC-Q100
- High Side Voltage - Max (Bootstrap):-
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Overview
The MCP14A0305-E/SN is a dual low-side MOSFET gate driver from Microchip Technology, housed in an SOIC-8 package. It provides two independent drivers with matched high-speed performance. Channel A features an inverting output configuration, while Channel B offers a non-inverting output. The device supports a supply voltage range of 4.5 V to 18 V and delivers a peak output current of 3 A. Key timing parameters include rise and fall times of 12 ns each, with a maximum propagation delay of 25 ns. It operates reliably within a temperature range of -40°C to +125°C.
Feature Summary
- Dual-channel architecture with one inverting and one non-inverting output for flexible control schemes
- Matched high-speed switching characteristics ensuring synchronized operation between channels
- Low threshold input compatibility for direct interfacing with various logic families
- Integrated enable functionality for precise power management and system control
Applications
- Synchronous buck converter topologies requiring complementary drive signals
- Half-bridge and full-bridge power conversion circuits
- Motor drive systems utilizing low-side N-channel MOSFETs
- DC-DC converter designs needing isolated or matched gate drive paths
Procurement Notes
Verify the specific suffix 'SN' corresponds to the SOIC-8 package and standard tube packaging when ordering. Confirm RoHS compliance status through official Microchip documentation prior to procurement. Ensure the design accommodates the specified operating temperature range and supply voltage limits. Cross-reference the datasheet revision date to ensure all electrical specifications remain current for your application requirements.
Selection Notes
Select this component when a dual low-side driver with asymmetric inversion is required. It is suitable for applications needing matched rise and fall times to minimize cross-conduction risks. Consider the SOIC-8 package constraints regarding thermal dissipation and PCB layout. Evaluate the 3 A output capability against the total gate charge of the target MOSFETs to ensure adequate switching speed.
Part Context
This part belongs to the MCP14A03xx series of MOSFET gate drivers, designed for general-purpose power switching applications. The series emphasizes high-speed performance and robustness in industrial and consumer electronics. The MCP14A0305 variant specifically addresses needs for dual-channel control with distinct logical outputs, differentiating it from single-channel or symmetric dual-channel alternatives in the same family.
Replacement Considerations
Direct substitutes may include other MCP14A0305 variants with different packaging options, such as MCP14A0305-E/MNY (TDFN-8). Verify pinout compatibility and electrical parameter equivalence before substitution. Alternative dual low-side drivers from other manufacturers require careful comparison of output current, propagation delay, and supply voltage ranges.
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