MCP14E10-E/SN

Overview

The MCP14E10-E/SN is a dual low-side MOSFET gate driver manufactured by Microchip Technology. It operates within a supply voltage range of 4.5 V to 18 V and delivers a peak output current of 3 A per channel. The device features non-inverting logic with an enable pin for power management. Key timing parameters include a rise time of 14 ns and a fall time of 17 ns. It is qualified under AEC-Q100 standards for automotive applications and functions reliably across a temperature range of -40°C to +125°C.

Feature Summary

• Dual-channel architecture providing independent control for two low-side MOSFETs
• Automotive-grade qualification ensuring reliability in harsh environments
• Integrated enable functionality for precise power sequencing and shutdown

Applications

• Automotive power distribution systems
• Compact isolated power supplies
• Industrial motor control circuits

Procurement Notes

Verify the specific suffix 'SN' corresponds to the SOIC-8 package when sourcing. Confirm AEC-Q100 compliance requirements match your design specifications. Check datasheet revisions for any updates to electrical characteristics or recommended operating conditions before finalizing procurement.

Selection Notes

Select this component for designs requiring dual low-side driving with automotive reliability. Ensure the input logic levels are compatible with the controller. Verify that the 3 A output current meets the gate charge requirements of the target MOSFETs at the intended switching frequency.

Part Context

This part belongs to the MCP14E series of high-speed MOSFET drivers from Microchip. It shares functional similarities with other variants like the MCP14E10-E/MF, differing primarily in packaging. The series is designed for efficient power switching in compact form factors.

Replacement Considerations

The MCP14E10-E/MF serves as a direct alternative with identical electrical performance but utilizes a DFN-8 package instead of SOIC-8. Verify footprint compatibility before substitution.