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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8SOIC
- Series:-
- Mfr:Microchip Technology
- Package:Tape & Reel (TR)
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply:4.5V ~ 18V
- Logic Voltage - VIL, VIH:0.8V, 2.4V
- Current - Peak Output (Source, Sink):3A, 3A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):25ns, 25ns
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The MCP14E10T-E/SN is a dual high-speed power MOSFET driver manufactured by Microchip Technology. It features a non-inverting configuration with two independent low-side drivers. The device supports a supply voltage range of 4.5 V to 18 V and delivers a peak output current of 3 A. It operates within an extended temperature range from -40°C to +125°C. The component is housed in an 8-pin SOIC package (0.154 inch width) designed for surface mount technology.
Feature Summary
- Dual channel architecture providing independent control for two low-side MOSFETs
- High-speed switching capability optimized for efficient power conversion applications
- Integrated enable functionality for precise power management and system synchronization
Applications
- DC-DC converter circuits requiring isolated or synchronized gate drive signals
- Motor control systems utilizing low-side switching configurations
- Power supply designs needing reliable high-current MOSFET activation
Procurement Notes
Verify the specific suffix E/SN confirms the tape and reel packaging format required for automated assembly processes. Ensure the operating temperature grade matches the thermal design constraints of the target application environment. Cross-reference the datasheet revision to confirm pinout compatibility with existing PCB layouts before finalizing procurement orders.
Selection Notes
Select this component when dual low-side driving is required without internal inversion logic. The 3 A output current rating suits medium-power MOSFETs commonly used in industrial and automotive sectors. Consider the 8-SOIC footprint for space-constrained designs where through-hole packages are unsuitable for the manufacturing workflow.
Part Context
This part belongs to the MCP14E1x family of dual MOSFET drivers. It shares functional similarities with other variants but differs in specific electrical characteristics and packaging options. The 'T' suffix indicates reel packaging, while 'SN' denotes the SOIC-8 body style. This series is designed for robust performance in noisy electromagnetic environments typical of power electronics.
Replacement Considerations
Direct substitutes include other MCP14E10 variants with compatible pinouts such as the leaded version. Verify that alternative drivers maintain the same 3 A peak current and 4.5–18 V supply range to ensure circuit integrity without redesigning the gate drive network.
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