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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8DIP
- Series:-
- Mfr:Microchip Technology
- Package:Tube
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply:4.5V ~ 18V
- Logic Voltage - VIL, VIH:0.8V, 2.4V
- Current - Peak Output (Source, Sink):4A, 4A
- Input Type:Inverting
- Rise / Fall Time (Typ):15ns, 18ns
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:8-DIP (0.300", 7.62mm)
- Supplier Device Package:8-PDIP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The MCP14E3-E/P is a dual high-speed power MOSFET gate driver manufactured by Microchip Technology. It features an inverting configuration with two independent drivers and outputs. The device supports a supply voltage range of 4.5 V to 18 V and delivers an output current of 4 A. Key timing parameters include a rise time of 15 ns and a fall time of 18 ns. It operates within a temperature range of -40°C to +125°C, utilizes CMOS/TTL logic, and is housed in an 8-PDIP package.
Feature Summary
- Dual-channel architecture providing independent control for multiple MOSFETs
- High-speed switching capability with nanosecond-level rise and fall times
- Robust operating temperature range suitable for demanding industrial environments
- Compatibility with standard CMOS and TTL logic input levels
Applications
- Motor drive systems requiring precise MOSFET control
- Industrial power conversion circuits
- Automotive electronics applications meeting AEC-Q100 standards
- General-purpose power management IC implementations
Procurement Notes
Verify the specific suffix against official Microchip documentation to confirm package type and temperature grade. Ensure compatibility with existing PCB footprints for the 8-PDIP configuration. Confirm that the inverting logic aligns with the system's control signal requirements before finalizing procurement decisions.
Selection Notes
Select this component when dual isolated gate driving is required with high-speed performance. Consider the 4 A peak current capability for driving medium-power MOSFETs efficiently. Evaluate the through-hole mounting requirement against available board space and assembly methods. Verify that the 4.5 V to 18 V supply range matches the system's power rails.
Part Context
This part belongs to the MCP14E3 series of dual MOSFET drivers from Microchip Technology. It is designed for applications requiring reliable switching of power semiconductors. The series emphasizes speed and robustness, making it suitable for various power electronics designs where precise timing and high current drive are essential for optimal system performance.
Replacement Considerations
Check for direct substitutes within the MCP14E family or other Microchip dual drivers with matching pinouts and electrical characteristics. Ensure any replacement maintains the same inverting logic and output current capabilities to avoid circuit redesign.
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