MCP14E3T-E/SN

Overview

The MCP14E3T-E/SN is a dual low-side MOSFET gate driver manufactured by Microchip Technology. It features an inverting configuration with two independent drivers housed in an 8-SOIC package. The device supports a supply voltage range of 4.5 V to 18 V and delivers a peak output current of 4.0 A. Key timing parameters include rise and fall times of 12 ns, ensuring high-speed switching performance for power applications.

Feature Summary

• Dual inverting low-side gate driver architecture
• High-speed switching capability with 12 ns transition times
• Robust 4.0 A peak source/sink output current
• Operates within a wide 4.5 V to 18 V supply voltage range

Applications

• Power factor correction circuits
• DC-DC converter topologies
• Motor control systems

Procurement Notes

Verify the specific suffix 'T-E/SN' to confirm the tape-and-reel packaging and extended temperature grade. Ensure compatibility with the target PCB footprint for the 8-SOIC package. Cross-reference the datasheet revision date to confirm pinout consistency with existing designs.

Selection Notes

Select this component when a dual low-side driver with inverting logic is required. The 4.0 A drive strength suits medium-power MOSFETs. Consider the 12 ns propagation delay for high-frequency switching requirements. Verify that the input signal levels are compatible with the chosen logic family.

Part Context

This part belongs to the MCP14E series of dual MOSFET drivers from Microchip. It shares the same core functionality as the MCP14E4 but lacks the enable pin feature found in other variants. The SOIC-8 package provides a compact solution for space-constrained power electronics designs.

Replacement Considerations

The MCP14E4T-E/SN is a functional substitute if an enable pin is not required. Verify that the absence of the enable pin on the replacement does not impact system safety or control logic.