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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8DFN
- Series:-
- Mfr:Microchip Technology
- Package:Tape & Reel (TR)
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply:4.5V ~ 18V
- Logic Voltage - VIL, VIH:0.8V, 2.4V
- Current - Peak Output (Source, Sink):4A, 4A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):15ns, 18ns
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-VDFN Exposed Pad
- Supplier Device Package:8-DFN-S (6x5)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The MCP14E4T-E/MF is a dual high-speed power MOSFET gate driver manufactured by Microchip Technology. It operates within a supply voltage range of 4.5 V to 18 V and delivers an output current of 4 A. The device features non-inverting logic compatible with CMOS and TTL standards, with rise and fall times of 30 ns each. It is housed in an 8-lead DFN-S package and supports an operating temperature range from -40°C to +125°C. The component is AEC-Q100 qualified for automotive applications.
Feature Summary
- Dual-channel configuration providing independent control for two MOSFETs
- High-speed switching capability with symmetric 30 ns transition times
- Automotive-grade reliability through AEC-Q100 qualification
- Low quiescent current consumption for efficient power management
Applications
- Industrial motor control systems
- Automotive power electronics
- DC-DC converter topologies
- Inverter circuits
Procurement Notes
Verify the specific suffix 'MF' corresponds to the tape-and-reel packaging format as indicated by the 'T' in the part number. Confirm that the AEC-Q100 qualification status meets your specific automotive grade requirements. Ensure the DFN-S package footprint matches your PCB layout constraints. Cross-reference the latest datasheet revision for any updates to electrical characteristics or recommended soldering profiles before finalizing procurement.
Selection Notes
Select this component when dual isolated gate driving is required for synchronous rectification or half-bridge configurations. The 4 A peak current rating suits medium-power MOSFETs. Consider the 30 ns propagation delay for switching frequency limitations. The wide operating temperature range allows deployment in harsh environments without additional thermal derating beyond standard calculations.
Part Context
This part belongs to the MCP14E4 family of dual MOSFET drivers. It shares functional similarities with other members like the MCP14E4T-E/SN but differs in packaging. The family is designed for low-side driving applications where fast switching and robust performance are critical. It complements single-channel drivers like the MCP14A0302T-E/MS for more complex multi-phase designs.
Replacement Considerations
The MCP14E4T-E/SN is a pin-compatible alternative offering identical electrical specifications in a SOIC-8 package. Verify package dimensions and thermal dissipation differences between DFN-S and SOIC-8 during substitution.
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