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MCP14E4T-E/SN
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Product Detailed Parameters
- Description：IC GATE DRVR LOW-SIDE 8SOIC
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration：Low-Side
- Channel Type：Independent
- Number of Drivers：2
- Gate Type：IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply：4.5V ~ 18V
- Logic Voltage - VIL, VIH：0.8V, 2.4V
- Current - Peak Output (Source, Sink)：4A, 4A
- Input Type：Non-Inverting
- Rise / Fall Time (Typ)：15ns, 18ns
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：-
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Overview
The MCP14E4T-E/SN is a dual high-speed power MOSFET driver manufactured by Microchip Technology. It features two independent drivers with an enable pin, designed for driving IGBTs and N-channel or P-channel MOSFETs. The device operates within a supply voltage range of 4.5 V to 18 V. It provides a peak output current of 4.0 A and supports surface mount installation in an 8-pin SOIC package. The component is rated for an operating temperature range from -40°C to +125°C.
Feature Summary
- Dual channel architecture with integrated enable functionality
- High-speed switching capability for efficient power control
- Robust drive current suitable for demanding power applications
Applications
- IGBT gate driving
- N-channel MOSFET switching
- P-channel MOSFET switching
Procurement Notes
Verify the specific suffix 'SN' corresponds to the SOIC-8 tape and reel packaging configuration as documented in official Microchip datasheets. Confirm that the automotive qualification status aligns with project requirements, noting potential variations between standard and VAO (Vehicle Application Oriented) variants. Ensure the ordering part number matches the exact electrical specifications and package type required for the design.
Selection Notes
Select this component when a dual low-side driver with enable control is required for high-speed power switching applications. It is appropriate for designs needing 4.0 A peak drive current and operation up to 18 V supply voltage. Consider the SOIC-8 package constraints and the -40°C to +125°C temperature range for environmental compatibility.
Part Context
This part belongs to the MCP14E4 family of dual MOSFET drivers. It shares functional similarities with other members like MCP14E4TEMF and MCP14E4TEP, differing primarily in package type and reel configuration. The family is characterized by high-speed performance and integrated enable pins for power management flexibility.
Replacement Considerations
Direct substitutes include MCP14E4TEMF and MCP14E4TEP. Verify package compatibility and ensure the alternative maintains the 4.0 A drive current and enable pin functionality. Cross-reference electrical parameters such as propagation delay and supply voltage range before substitution.
