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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8DIP
- Series:-
- Mfr:Microchip Technology
- Package:Tube
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply:4.5V ~ 18V
- Logic Voltage - VIL, VIH:0.8V, 2.4V
- Current - Peak Output (Source, Sink):4A, 4A
- Input Type:Inverting, Non-Inverting
- Rise / Fall Time (Typ):15ns, 18ns
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:8-DIP (0.300", 7.62mm)
- Supplier Device Package:8-PDIP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The MCP14E5-E/P is a dual complementary MOSFET gate driver manufactured by Microchip Technology in an 8-lead PDIP package. It provides 4.0A peak source and sink current to drive power MOSFETs efficiently. The device features both inverting and non-inverting outputs, allowing flexible control configurations for low-side switching applications.
Feature Summary
- Dual complementary output configuration for driving high-side or low-side MOSFET pairs
- High peak output current capability of 4.0A for fast switching transitions
- Integrated enable pin for power management and shutdown control
Applications
- Low-side MOSFET gate driving in DC-DC converters
- Motor control circuits requiring complementary switching signals
- Power supply designs utilizing external N-channel MOSFETs
Procurement Notes
Verify the specific suffix 'P' confirms the PDIP-8 through-hole package variant. Ensure the operating voltage range matches your system requirements, typically spanning from 4.5V to 18V. Confirm that the 4.0A peak current rating is sufficient for the target MOSFET gate charge at your desired switching frequency. Check for RoHS compliance status if required by your manufacturing standards.
Selection Notes
Select this component when a dual driver with separate inverting and non-inverting paths is needed without internal dead-time generation. It is suitable for applications where external timing components define the switching behavior. Consider thermal dissipation capabilities if driving large gate charges at high frequencies, as the PDIP package has limited thermal performance compared to surface-mount options.
Part Context
This part belongs to the MCP14E series of high-speed power MOSFET drivers. It is functionally similar to other variants like the MCP14E6 but offers higher peak current. The series is designed for robust performance in industrial and consumer power electronics, providing reliable switching characteristics for various MOSFET types.
Replacement Considerations
Direct substitutes include the MCP14E5-E/SN for the same functionality in an SOIC-8 package. Other compatible drivers in the same family may offer different current ratings or packaging options depending on board space constraints.
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