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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8SOIC
- Series:-
- Mfr:Microchip Technology
- Package:Tube
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply:4.5V ~ 18V
- Logic Voltage - VIL, VIH:0.8V, 2.4V
- Current - Peak Output (Source, Sink):2A, 2A
- Input Type:Inverting, Non-Inverting
- Rise / Fall Time (Typ):12ns, 15ns
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The MCP14E8-E/SN is a dual high-speed power MOSFET driver manufactured by Microchip Technology. It operates within a supply voltage range of 4.5 V to 18 V and delivers an output current of 2 A. The device features rise and fall times of 12 ns and 15 ns, respectively. It supports inverting and non-inverting configurations with an enable function. Operating temperatures span from -40°C to +125°C. The component is housed in an 8-pin SOIC package and meets AEC-Q100 automotive qualification standards.
Feature Summary
- Dual-channel architecture providing independent inverting and non-inverting outputs for flexible low-side switching control.
- High-speed switching capability with nanosecond-level rise and fall times to minimize transition losses.
- Integrated enable pin allows for precise management of driver state and power consumption during idle periods.
Applications
- Automotive electronic control units requiring AEC-Q100 qualified components
- Low-side switching applications for N-channel and P-channel MOSFETs
- Industrial motor drive circuits utilizing high-speed gate driving
Procurement Notes
Verify the specific suffix 'SN' corresponds to the 8-pin SOIC surface-mount package configuration. Confirm that the '-E' designation indicates the extended industrial temperature range suitable for demanding environments. Ensure compatibility with the target PCB footprint and soldering profile requirements for SOIC-8 packages.
Selection Notes
Select this component when dual-channel low-side driving is required with automotive reliability standards. The 2 A peak current is sufficient for standard power MOSFETs. Consider the inverting/non-inverting flexibility for logic interface matching. Verify that the 18 V maximum supply voltage aligns with the system's gate drive requirements.
Part Context
This part belongs to the MCP14E8 family of dual high-speed MOSFET drivers. It shares functional similarities with other members like the MCP14E8T-E/MF but differs in packaging and mounting style. The series is designed for efficient power switching applications where speed and reliability are critical parameters.
Replacement Considerations
Direct substitutes include the MCP14E8-E/P for through-hole mounting or MCP14E8T-E/MF for DFN-8 surface mount integration. These alternatives maintain identical electrical specifications and functionality while adapting to different board layout constraints.
FAQ
Does the MCP14E8-E/SN support both N-channel and P-channel MOSFETs?
Yes, the datasheet specifies that the driver is compatible with both N-channel and P-channel power MOSFETs as well as IGBTs.
What is the significance of the AEC-Q100 qualification?
AEC-Q100 qualification indicates that the component meets strict stress test requirements for automotive electronic components, ensuring reliability in vehicle environments.
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