— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8SOIC
- Series:-
- Mfr:Microchip Technology
- Package:Tape & Reel (TR)
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply:4.5V ~ 18V
- Logic Voltage - VIL, VIH:0.8V, 2.4V
- Current - Peak Output (Source, Sink):2A, 2A
- Input Type:Inverting, Non-Inverting
- Rise / Fall Time (Typ):12ns, 15ns
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The MCP14E8T-E/SN is a dual high-speed power MOSFET driver manufactured by Microchip Technology. It features separate inverting and non-inverting outputs with independent enable controls, housed in an 8-pin SOIC package. The device operates within a supply voltage range of 4.5 V to 18 V and delivers a peak output current of 2 A. Key timing parameters include a rise time of 12 ns and a fall time of 15 ns. It functions reliably across an operating temperature range from -40°C to +125°C.
Feature Summary
- Dual-channel architecture providing both inverting and non-inverting logic outputs for flexible gate drive configurations.
- Independent enable pins allow precise control over each channel's activation state to prevent shoot-through or manage load sequencing.
- High-speed switching capability with nanosecond-level rise and fall times supports efficient operation of power MOSFETs.
- Robust thermal performance ensures stable operation in demanding industrial environments across extended temperature ranges.
Applications
- Half-bridge and full-bridge converter topologies requiring isolated or complementary gate signals.
- Motor control systems driving low-side N-channel MOSFETs with precise timing requirements.
- DC-DC converter stages where fast switching transitions minimize conduction losses.
- Industrial automation equipment utilizing high-frequency power switching elements.
Procurement Notes
Verify the specific suffix 'SN' confirms the 8-pin SOIC package and tape-and-reel packaging quantity of 3300 units. Ensure the 'E' designation aligns with the required industrial temperature grade (-40°C to +125°C). Cross-reference the datasheet revision to confirm pinout compatibility with existing PCB footprints. Confirm RoHS compliance status if restricted substances are mandated for your assembly process.
Selection Notes
Select this component when dual, asymmetric gate drive signals are necessary without external logic inversion. The 2A peak current suits medium-power MOSFETs, while the 12ns/15ns transition times balance speed and EMI. Consider the SOIC-8 footprint constraints and ensure adequate PCB copper area for thermal dissipation given the 1800µA quiescent current draw during active operation.
Part Context
This part belongs to Microchip’s MCP14E series of dedicated MOSFET drivers, designed for cost-sensitive applications requiring reliable switching performance. Unlike general-purpose logic gates, these drivers provide sufficient sink/source current to rapidly charge and discharge gate capacitances, reducing switching losses in power conversion circuits.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pin-to-pin compatibility and electrical specifications before considering alternative manufacturers or generic equivalents.
FAQ
What is the difference between the two outputs of the MCP14E8T-E/SN?
The device provides one inverting output and one non-inverting output, allowing it to drive complementary pairs of MOSFETs directly without additional external inverters.
How does the enable function operate on this driver?
Each of the two channels has a dedicated enable pin. Driving these pins high activates the respective output, while low disables it, offering independent control over each side of the bridge.
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