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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8DFN
- Series:-
- Mfr:Microchip Technology
- Package:Tube
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply:4.5V ~ 18V
- Logic Voltage - VIL, VIH:0.8V, 2.4V
- Current - Peak Output (Source, Sink):3A, 3A
- Input Type:Inverting
- Rise / Fall Time (Typ):14ns, 17ns
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-VDFN Exposed Pad
- Supplier Device Package:8-DFN-S (6x5)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The MCP14E9-E/MF is a dual low-side MOSFET gate driver manufactured by Microchip Technology. It operates within a supply voltage range of 4.5 V to 18 V and delivers an output current of 3 A. The device features non-inverting logic configuration with rise and fall times of approximately 12 ns to 17 ns. It supports through-hole or surface-mount installation in an 8-DFN package, functioning reliably across an extended temperature range from -40°C to +125°C.
Feature Summary
- Dual-channel architecture providing independent control for two low-side power switches
- High peak output current capability designed for rapid MOSFET switching transitions
- Low quiescent supply current to minimize power consumption during standby states
- Automotive qualification ensuring reliability under harsh thermal and electrical conditions
Applications
- Isolated DC-DC converter topologies requiring synchronous rectification
- Motor drive circuits utilizing low-side N-channel MOSFETs
- Industrial power supplies needing robust gate driving performance
- Battery management systems interfacing with power stage components
Procurement Notes
Verify the specific suffix designation against official Microchip documentation to confirm pinout compatibility and package variant. Ensure the procurement channel provides valid traceability records for automotive-grade components. Cross-reference the manufacturer part number with the latest datasheet revision to confirm electrical characteristics match the design requirements before finalizing orders.
Selection Notes
Select this component when designing circuits that require dual low-side driving with high current capability in a compact footprint. Consider the DFN package constraints regarding thermal dissipation and PCB layout. Evaluate the operating voltage range against the target MOSFET gate threshold requirements. Verify that the non-inverting logic aligns with the control signal polarity used in the system architecture.
Part Context
This device belongs to the MCP14E7 family of high-speed power MOSFET drivers. It shares architectural similarities with other members like the MCP14E8 and MCP14E10 but differs in specific output configurations and packaging options. The family is designed to provide reliable switching performance for various power electronics applications requiring efficient gate drive solutions.
Replacement Considerations
Direct substitutes include the MCP14E8T-E/MF for similar dual low-side functionality in surface-mount packages. The MCP14E7-E/P offers comparable performance in a through-hole DIP package. Verify pin-to-pin compatibility and electrical specifications before implementing any alternative component in existing designs.
FAQ
What is the logic configuration of the MCP14E9-E/MF?
The MCP14E9-E/MF features a non-inverting logic configuration, meaning the output state follows the input signal state directly.
Does the MCP14E9-E/MF support automotive applications?
Yes, the component is qualified to AEC-Q100 standards, making it suitable for automotive electronic systems requiring high reliability.
What is the maximum operating temperature for this gate driver?
The device is rated for operation up to a maximum junction temperature of +125°C, allowing use in high-temperature environments.
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