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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8SOIC
- Series:-
- Mfr:Microchip Technology
- Package:Tube
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel, P-Channel)
- Voltage - Supply:4.5V ~ 18V
- Logic Voltage - VIL, VIH:0.8V, 2.4V
- Current - Peak Output (Source, Sink):3A, 3A
- Input Type:Inverting
- Rise / Fall Time (Typ):14ns, 17ns
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The MCP14E9-E/SN is a dual high-speed power MOSFET gate driver manufactured by Microchip Technology. It operates within a supply voltage range of 4.5 V to 18 V and delivers an output current of 3 A. The device features low propagation delays with rise times of 14 ns and fall times of 17 ns. It is housed in an SOIC-8 surface-mount package and supports an operating temperature range from -40°C to +125°C.
Feature Summary
- Dual-channel configuration for independent control of two power switches
- Integrated enable pin for precise timing and power management
- High-speed switching capability with nanosecond-level transition times
- Robust thermal performance suitable for extended industrial environments
Applications
- Motor drive systems requiring synchronized switching
- DC-DC converter topologies needing isolated or non-isolated gate control
- Industrial automation equipment utilizing high-frequency power stages
- Inverter circuits in renewable energy systems
Procurement Notes
Verify the specific suffix SN against the official Microchip datasheet to confirm the SOIC-8 package and lead-free RoHS compliance. Ensure the ordering part number matches the exact electrical specifications required for your design, as minor variations may exist across different manufacturing revisions or regional certifications.
Selection Notes
Select this component when a dual-channel driver with moderate peak current is sufficient for the application. Compare its 3 A output capability against higher-current alternatives if driving large capacitive loads. Consider the SOIC-8 footprint constraints and verify that the 18 V maximum supply voltage aligns with the system's power rail availability.
Part Context
This device belongs to the MCP14E series of MOSFET gate drivers designed for efficiency and speed. It complements other variants like the MCP14A0901, which offers higher current ratings. The series focuses on providing reliable switching performance for power electronics applications where size and cost-effectiveness are critical design factors.
Replacement Considerations
Direct substitutes include the MCP14E9-E/P for through-hole mounting requirements. For applications requiring higher current, consider the MCP14A0901 series. Verify pin compatibility and thermal characteristics before swapping components to ensure circuit integrity.
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