ChipApex | Global Electronic Components Supplier
MCR8SM
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：SCR 600V 8A TO220AB
- Series：-
- Mfr：onsemi
- Package：Tube
- Voltage - Off State：600 V
- Voltage - Gate Trigger (Vgt) (Max)：1 V
- Current - Gate Trigger (Igt) (Max)：200 µA
- Current - Hold (Ih) (Max)：6 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm)：80A @ 60Hz
- SCR Type：Sensitive Gate
- Operating Temperature：-40°C ~ 110°C
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Voltage - On State (Vtm) (Max)：1.8 V
- Current - On State (It (AV)) (Max)：-
- Current - On State (It (RMS)) (Max)：8:00 AM
- Current - Off State (Max)：10 µA
Download product information
Overview
The MCR8SM is a reverse blocking thyristor designed for half-wave AC control applications. It features sensitive gate technology allowing triggering by microcontrollers and logic circuits. The device supports peak repetitive off-state voltages up to 800 V and an on-state RMS current rating of 8 A at 80°C. It offers high surge current capability of 80 A and includes glass passivated junctions for reliability. The component is housed in a rugged TO-220AB package.
Feature Summary
- Sensitive gate architecture enables direct triggering from microcontrollers and standard logic circuits
- High surge current capability provides robustness against transient electrical events
- Glass passivated junctions ensure long-term reliability and uniform performance
Applications
- Motor controls
- Heating controls
- Power supplies
Procurement Notes
Verify the specific ordering suffix (e.g., MCR8SMG) to confirm lead-free packaging status. Confirm that the selected variant matches the required voltage rating, as the series spans multiple blocking voltage levels. Ensure thermal management aligns with the specified junction-to-case resistance values during operation.
Selection Notes
Select based on the required peak repetitive off-state voltage, which ranges across the series. Evaluate the thermal environment to ensure the case temperature remains within limits for the 8 A RMS rating. Verify that the gate trigger current specifications are compatible with the available drive circuitry for reliable switching.
Part Context
This component belongs to the MCR8S/D family of sensitive gate silicon controlled rectifiers manufactured by onsemi. The series is engineered primarily for half-wave AC control scenarios where robust power handling and simple gate drive requirements are necessary.
Replacement Considerations
MCR8SDG
FAQ
What is the maximum peak repetitive off-state voltage for this device?
The MCR8SM variant supports a peak repetitive off-state voltage of 600 V.
How does the sensitive gate feature benefit design?
It allows the device to be triggered directly by microcontrollers and other low-power logic circuits without requiring complex gate drive amplification.
What is the critical rate of rise of off-state voltage immunity?
The device guarantees a minimum dv/dt immunity of 5 V/µs at 110°C.
