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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 16QFN
- Series:-
- Mfr:Microchip Technology
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:4
- Gate Type:MOSFET (N-Channel, P-Channel)
- Voltage - Supply:5V ~ 12V
- Logic Voltage - VIL, VIH:0.3V, 1.7V
- Current - Peak Output (Source, Sink):2A, 2A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):6ns, 6ns
- Operating Temperature:-20°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:16-VQFN Exposed Pad
- Supplier Device Package:16-QFN (4x4)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The MD1810K6-G is a high-speed quad gate driver manufactured by Microchip Technology, designed for driving N-channel and P-channel MOSFETs. It features four independent drivers in a 16-pin QFN package. The device operates with a supply voltage range of 5 V to 12 V and delivers an output current of 2 A. Key electrical parameters include a rise time and fall time of 6 ns, an operating supply current of 7 mA, and a power dissipation capability of 2.2 W. It supports non-inverting inputs and functions within a junction temperature range of -20°C to +125°C.
Feature Summary
- Provides four independent high-speed channels for simultaneous control of multiple MOSFETs.
- Supports both N-channel and P-channel MOSFET topologies for versatile bridge configurations.
- Features fast switching characteristics with 6 ns rise and fall times to minimize transition losses.
- Includes integrated protection mechanisms suitable for industrial-grade applications.
Applications
- Motor control systems requiring precise timing and high-speed switching.
- Power supply designs utilizing half-bridge or full-bridge topologies.
- Industrial automation equipment needing robust gate drive solutions.
- Inverter circuits for renewable energy systems.
Procurement Notes
Verify the specific suffix and package variant against the official Microchip datasheet to ensure compatibility with your design requirements. Confirm moisture sensitivity levels and reflow soldering profiles prior to assembly. Check for any recent product change notices that may affect pinout or electrical specifications. Ensure the source is an authorized distributor to guarantee authenticity and traceability.
Selection Notes
Select this component when a compact solution with four independent high-speed channels is required. It is suitable for applications demanding low propagation delay and high peak output current. Consider the thermal performance and power dissipation limits if operating at high duty cycles. Verify that the input logic levels are compatible with the controlling microcontroller or FPGA.
Part Context
This part belongs to Microchip's family of high-speed gate drivers, optimized for efficiency and reliability in power electronics. The MD1810K6-G specifically targets applications requiring multiple isolated or non-isolated gate drives in a small form factor. It complements other drivers in the series by offering balanced performance for both high-side and low-side switching tasks.
Replacement Considerations
Consult the official Microchip cross-reference documentation for verified substitutes. Ensure any replacement maintains the same pinout, voltage ratings, and current capabilities. Verify that alternative components meet the same thermal and environmental specifications for direct integration without redesign.
FAQ
What is the maximum output current per channel?
The MD1810K6-G provides a peak output current of 2 A per channel.
Does the device support both N-channel and P-channel MOSFETs?
Yes, the MD1810K6-G is designed to drive both N-channel and P-channel MOSFETs.
What is the typical rise and fall time?
The typical rise and fall times are 6 ns each, enabling fast switching speeds.
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