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The MDD172-12N1 is a high-voltage silicon rectifier diode module manufactured by IXYS. It belongs to the MDD172 series and features a serial diode configuration housed in a Y4-M6 package. The device supports a maximum continuous forward current of 172A and withstands a peak reverse repetitive voltage of 1200V. Key electrical parameters include a maximum forward voltage of 1.15V, a peak reverse current of 30mA, and a peak non-repetitive forward surge current of 11.9kA. It operates within a temperature range of -40°C to +150°C.
Verify the specific suffix 'N1' against the manufacturer's latest datasheet to confirm pinout and terminal configuration. Ensure the ordering part number matches the exact voltage and current ratings required for your circuit design. Cross-reference the Y4-M6 package dimensions with your mechanical assembly drawings before procurement to guarantee proper fitment.
Select this component when designing circuits requiring high voltage isolation and significant current carrying capacity. The 1200V rating makes it suitable for medium-voltage AC-to-DC conversion applications. Consider the 1.15V forward voltage drop for thermal management calculations, as higher losses may require adequate heatsinking solutions to maintain safe operating temperatures under full load conditions.
This module is part of the IXYS MDD172 series, designed for demanding power electronics applications. The series offers reliable performance in industrial environments where durability and efficiency are critical. IXYS utilizes advanced silicon technology to achieve high breakdown voltages while maintaining low forward voltage drops, ensuring optimal energy conversion efficiency in high-power rectifier modules.
Public confirmed substitute part numbers: MDD172-18N1.