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The IXYS MDD310-20N1 is a high-power silicon diode module featuring a direct copper bonded Al2O3 ceramic base plate. It provides a maximum repetitive reverse voltage (VRRM) of 2000 V and a maximum average forward current (IFAVM) of 305 A per diode at a case temperature of 100°C with a 180° sine wave conduction angle. The module utilizes planar passivated chips and offers an isolation voltage of 3600 Vrms. It is designed for screw mounting in the Y2-DCB package, weighing approximately 320 g.
Verify the specific part number against official manufacturer documentation to confirm electrical ratings and physical dimensions. Ensure that the required thermal management and mounting torque specifications are met during installation. Confirm RoHS compliance status through the latest datasheet or component certification documents provided by the supplier.
Select this module based on the required 2000 V reverse voltage rating and the 305 A continuous current capability per diode. Consider the thermal resistance values and the operating temperature range of -40°C to +150°C for junction temperature limits. Evaluate the mechanical constraints of the Y2-DCB package and the necessary mounting hardware for secure installation.
This component belongs to the MDD 310 series of high power diode modules manufactured by IXYS. The series includes variants with different voltage ratings ranging from 1200 V to 2200 V, all sharing similar current handling capabilities and structural features. The MDD310-20N1 specifically denotes the 2000 V version within this lineup.
Official substitutes within the same series include MDD310-12N1, MDD310-14N1, MDD310-16N1, MDD310-18N1, and MDD310-22N1. These parts share identical current ratings and packaging but differ in their maximum repetitive reverse voltage specifications.