MDD312-20N1

Overview

The MDD312-20N1 is a high-voltage standard rectifier module manufactured by IXYS. It utilizes silicon technology and features a double series diode configuration housed in a Y1-CU case. The device supports screw mounting and operates within a temperature range of -40°C to 150°C. Key electrical parameters include a maximum repetitive peak reverse voltage (Vrrm) of 1200 V, a maximum continuous forward current (If) of 310 A, and a maximum forward voltage (Vf) of 1.32 V. The module exhibits a peak non-repetitive forward surge current (Ifsm) of 11.9 kA and a peak reverse current (Ir) of 30 mA.

Feature Summary

• Features direct copper bonded Al2O3 ceramic with a copper base plate for efficient thermal management.
• Incorporates planar passivated chips to ensure robust semiconductor performance.
• Provides an isolation voltage rating of 3600 V for enhanced safety.

Applications

• High voltage industrial power supplies
• Industrial motor drives
• Welding equipment

Procurement Notes

Verify the specific datasheet version to confirm exact electrical tolerances and mechanical dimensions prior to integration. Ensure that the procurement source provides official documentation from IXYS or authorized distributors to guarantee component authenticity. Cross-reference the package type Y1-CU with your thermal design requirements. Confirm compliance with RoHS standards if required by your manufacturing specifications.

Selection Notes

Select this module when applications require high current handling capabilities combined with significant reverse voltage blocking. The 310 A continuous current rating suits heavy-duty industrial loads. Consider the 1200 V rating against system transient voltages. The Y1-CU package facilitates standard screw mounting, simplifying assembly into existing chassis designs compared to alternative form factors.

Part Context

This component belongs to the MDD312 series of high-power diode modules from IXYS. The series is characterized by its use of direct copper bonding technology on ceramic substrates. This construction method distinguishes it from lower-power discrete packages by offering superior thermal conductivity and mechanical stability for demanding power electronics environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data.