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The MG1275S-BA1MM is a half-bridge IGBT module manufactured by Littelfuse Inc. It features a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 105A. The device is designed for chassis mounting in the S3 package configuration. It operates within a junction temperature range of -40°C to 150°C. The module dissipates up to 630W of power, providing a robust solution for high-power electronic applications requiring reliable switching performance.
Verify the specific part number MG1275S-BA1MM against official Littelfuse documentation to ensure compatibility with system requirements. Confirm that the S3 package dimensions and chassis mounting specifications match the mechanical design. Check for any obsolete status or lifecycle notices from the manufacturer before finalizing procurement plans.
Select this component when a 1200V half-bridge IGBT module is required for high-current applications. Ensure the thermal management system can handle the specified power dissipation and operating temperature range. Verify that the gate drive characteristics align with the control circuitry used in the target application.
This module belongs to Littelfuse's IGBT module series, designed for demanding power electronics environments. The S3 package offers standardized mounting options for integration into larger assemblies. It serves as a critical switching element in systems requiring high voltage and current handling capabilities.
Consult official Littelfuse substitution guides for verified alternative part numbers. Do not assume cross-compatibility with other manufacturers' modules without detailed electrical and mechanical comparison.