MGD3100BM38EK

$8.53

Description：IC GATE DRVR HALF-BRIDGE 32BSSOP
Series：-
Mfr：NXP USA Inc.
Package：Tube

SKU:f72a5d5b3934 Category: Gate Drivers Brand: NXP USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IC GATE DRVR HALF-BRIDGE 32BSSOP
Series：-
Mfr：NXP USA Inc.
Package：Tube
Driven Configuration：Half-Bridge
Channel Type：Single
Number of Drivers：1
Gate Type：IGBT, MOSFET (N-Channel)
Voltage - Supply：3.3V
Logic Voltage - VIL, VIH：-
Current - Peak Output (Source, Sink)：15A, 15A
Input Type：-
Rise / Fall Time (Typ)：-
Operating Temperature：-40°C ~ 125°C (TA)
Mounting Type：Surface Mount
Package / Case：32-BSSOP (0.295", 7.50mm Width)
Supplier Device Package：32-SOIC
Grade：Automotive
Qualification：AEC-Q100
High Side Voltage - Max (Bootstrap)：-

Download product information

MGD3100BM38EK

Overview

The MGD3100BM38EK is a single-channel current-isolated gate driver designed for IGBT and SiC applications in xEV traction inverters. It operates within a supply voltage range of 5 V to 40 V and supports junction temperatures from -40 °C to +125 °C. The device features a 500 mΩ on-resistance and utilizes WSOIC-32 surface-mount packaging. It is part of the GD3100 series, intended for high-integration automotive electrification systems.

Feature Summary

Current isolation architecture for driving IGBT and SiC power modules
Single-channel configuration optimized for traction inverter applications
High-temperature operational capability suitable for harsh automotive environments

Applications

xEV traction inverters
IGBT module gate driving
SiC MOSFET gate driving

Procurement Notes

Verify the specific suffix 'EK' against official NXP documentation to confirm tube packaging and exact electrical tolerances. Ensure compatibility with the FRDMGD3100HB8EVM development kit if evaluation is required. Confirm RoHS compliance status through the manufacturer's latest certification documents before integration into production designs.

Selection Notes

Select this component for single-phase or half-bridge configurations requiring galvanic isolation between control logic and high-voltage power stages. The WSOIC-32 package offers a compact footprint for dense PCB layouts. Consider thermal management requirements given the 125 °C maximum operating temperature limit for reliable long-term performance in electric vehicle drive units.

Part Context

This device belongs to the GD3100 series of gate drivers from NXP Semiconductors. It complements other automotive solutions like the S32K microcontrollers and TJA transceivers in complete EV inverter reference designs. The series focuses on providing flexible, high-integration drivers for next-generation electric and hybrid vehicle powertrains.