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MGD3100BM58EK
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Product Detailed Parameters
- Description：IC GATE DRVR HALF-BRIDGE 32BSSOP
- Series：-
- Mfr：NXP USA Inc.
- Package：Tube
- Driven Configuration：Half-Bridge
- Channel Type：Single
- Number of Drivers：1
- Gate Type：IGBT, MOSFET (N-Channel)
- Voltage - Supply：5V
- Logic Voltage - VIL, VIH：-
- Current - Peak Output (Source, Sink)：15A, 15A
- Input Type：-
- Rise / Fall Time (Typ)：-
- Operating Temperature：-40°C ~ 125°C (TA)
- Mounting Type：Surface Mount
- Package / Case：32-BSSOP (0.295", 7.50mm Width)
- Supplier Device Package：32-SOIC
- Grade：Automotive
- Qualification：AEC-Q100
- High Side Voltage - Max (Bootstrap)：-
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Overview
The MGD3100BM58EK is a current-isolated gate driver IC from NXP Semiconductors, designed for IGBT and SiC applications in xEV traction inverters. It operates within a supply voltage range of 5 V to 40 V and features a single channel configuration. The device supports surface mount installation in a WSOIC-32 package and functions reliably across an extended temperature range from -40 °C to +125 °C. With a maximum on-resistance of 500 mohms, it integrates essential protection mechanisms for high-voltage power conversion systems.
Feature Summary
- Provides galvanic isolation for safe control of high-side switches in electric vehicle traction inverters
- Optimized for driving both IGBT and Silicon Carbide (SiC) power modules
- Integrates robust protection features to ensure reliable operation under harsh automotive conditions
Applications
- xEV traction inverter systems
- High-voltage motor drive circuits
- Industrial power conversion platforms
Procurement Notes
Verify the specific suffix against official documentation to confirm pinout and isolation specifications. Ensure compatibility with the target power module thermal interface. Confirm RoHS compliance status through the manufacturer's latest release notes before finalizing procurement orders.
Selection Notes
Select this component when designing isolated gate drive stages for electric vehicle powertrains. It is suitable for applications requiring simultaneous support for IGBT and SiC technologies. Consider the WSOIC-32 package for space-constrained PCB layouts requiring high channel density.
Part Context
This part belongs to the GD3100 series of gate drivers developed by NXP Semiconductors. The series targets the growing demand for efficient power electronics in electrified vehicles. It complements other automotive-grade components like MCUs and safety ICs within complete inverter reference designs.
Replacement Considerations
Consult the official GD3100 family datasheet for direct pin-to-pin compatible alternatives. Verify that any substitute maintains identical isolation voltage ratings and thermal performance characteristics for the intended application.
