MGD3160AM315EKT

MGD3160AM315EKT

$6.52
  • Description:IC GATE DRVR HIGH-SIDE 32SOIC
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tray

SKU:9dd29b666e52 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR HIGH-SIDE 32SOIC
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tray
  • Driven Configuration:High-Side
  • Channel Type:Single
  • Number of Drivers:1
  • Gate Type:IGBT, SiC MOSFET
  • Voltage - Supply:4.5V ~ 40V
  • Logic Voltage - VIL, VIH:-
  • Current - Peak Output (Source, Sink):15A, 15A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):-
  • Operating Temperature:-40°C ~ 125°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:32-BSSOP (0.295", 7.50mm Width)
  • Supplier Device Package:32-SOIC
  • Grade:Automotive
  • Qualification:AEC-Q100
  • High Side Voltage - Max (Bootstrap):-

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MGD3160AM315EKT

Overview

The MGD3160AM315EKT is a single-channel high-voltage isolated gate driver IC designed for SiC MOSFETs and IGBTs. It features a half-bridge configuration with one driver and one output, delivering a peak output current of 15 A. The device operates within a supply voltage range of 4.5 V to 40 V and supports non-inverting logic. It is housed in an SOIC-32 surface-mount package and is qualified to AEC-Q100 standards. The component functions reliably across an operating temperature range from -40°C to +150°C.

Feature Summary

  • Integrated SPI programmable drive, protection, and fault reporting capabilities for optimized switching conditions.
  • Fast Vce desaturation detection and response time under 1.2 microseconds for silicon carbide devices.
  • Built-in high-voltage temperature sensing with programmable offset and gain for thermal monitoring.

Applications

  • Silicon carbide (SiC) MOSFET gate driving in electric vehicle traction inverters
  • IGBT gate driving in power conversion systems
  • High-density xEV inverter solutions requiring functional safety compliance

Procurement Notes

Verify the specific suffix EKT against official NXP documentation to confirm tray packaging and reel specifications. Ensure the part number matches the exact electrical parameters required for the target application. Cross-reference the manufacturer's lifecycle status to confirm availability and long-term supply commitments before finalizing procurement plans.

Selection Notes

Select this component when designing systems that require precise control over SiC or IGBT switching characteristics through digital interfaces. The integrated desaturation protection and temperature sensing reduce external component count. Verify compatibility with the system's voltage levels and thermal management requirements given the wide operating temperature range.

Part Context

This device belongs to the GD3160 series, which represents advanced high-voltage isolated gate drivers. The series is engineered to support automotive functional safety standards, specifically ASIL D contexts. It serves as a critical interface between low-voltage controllers and high-power semiconductor switches in electrified vehicle architectures.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Refer to the manufacturer's official replacement guide or contact technical support for validated alternatives.

MGD3160AM315EKTMGD3160AM315EKT
$6.52
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