MGD3160AM318EK

MGD3160AM318EK

$5.70
  • Description:IC GATE DRVR HIGH-SIDE 32SOIC
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tube

SKU:a353c999069a Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR HIGH-SIDE 32SOIC
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tube
  • Driven Configuration:High-Side
  • Channel Type:Single
  • Number of Drivers:1
  • Gate Type:IGBT, SiC MOSFET
  • Voltage - Supply:4.5V ~ 40V
  • Logic Voltage - VIL, VIH:-
  • Current - Peak Output (Source, Sink):15A, 15A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):-
  • Operating Temperature:-40°C ~ 125°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:32-BSSOP (0.295", 7.50mm Width)
  • Supplier Device Package:32-SOIC
  • Grade:Automotive
  • Qualification:AEC-Q100
  • High Side Voltage - Max (Bootstrap):-

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MGD3160AM318EK

Overview

The MGD3160AM318EK is a single-channel high-voltage isolated gate driver from the GD3160 series, manufactured by NXP Semiconductors. Designed for driving and protecting Silicon Carbide (SiC) MOSFETs and Silicon IGBTs in automotive applications, it features SPI programmable drive and protection capabilities. The device supports load currents of 15A with a typical drain-to-source on-resistance of 500mΩ. It operates within an ambient temperature range of -40°C to 125°C and provides electrical isolation compliant with UL1577 standards at 5000Vrms. Key specifications include a minimum common-mode transient immunity (CMTI) exceeding 100V/ns and integrated high-voltage temperature sensing.

Feature Summary

  • SPI programmable drive, protection, and fault reporting for optimizing SiC MOSFET or Si IGBT switching conditions
  • Integrated high-voltage temperature sensing with programmable offset and gain for thermal monitoring
  • Fast Vce desat detection and reaction time under 1.2µs specifically optimized for SiC devices
  • Supports ASIL D compliant xEV inverter solutions through integrated functional safety features

Applications

  • Electric vehicle (xEV) traction inverters utilizing SiC MOSFETs
  • On-board chargers (OBC) requiring high-voltage isolation
  • DC-DC converters for automotive power management systems

Procurement Notes

Verify the specific suffix against official NXP documentation to confirm package type and tape/reel configuration. Confirm automotive qualification status and RoHS compliance directly with the manufacturer. Check for availability restrictions or long-term supply commitments as these vary by region and distributor. Ensure design-in support resources are accessible if required for development.

Selection Notes

Select this component when designing high-density power stages for electric vehicles that require precise control over SiC MOSFET switching. The SPI interface allows for dynamic adjustment of drive strength and protection thresholds, reducing bill-of-materials costs compared to discrete solutions. Consider the integrated fault management and temperature sensing features if system-level safety diagnostics are critical for ASIL D compliance.

Part Context

The MGD3160AM318EK belongs to the GD3160 family of advanced isolated gate drivers. This series is engineered to replace traditional discrete gate driver circuits, offering enhanced performance for next-generation power electronics. It complements other NXP automotive components such as the S32K microcontrollers and TJA transceivers in complete EV reference designs like the EV-INVERTERGEN3.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult NXP technical support for qualified alternatives or cross-reference options based on specific pinout and electrical parameter requirements.

MGD3160AM318EKMGD3160AM318EK
$5.70
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