MGD3160AM318EKR2

Overview

The MGD3160AM318EKR2 is an advanced single-channel high-voltage isolated gate driver designed for driving and protecting silicon carbide (SiC) MOSFETs. It features a load current of 15 A, a drain-to-source on resistance of 500 mOhm, and operates with a supply voltage range of 4.5 V to 40 V. The device supports split output gate current drive of ±15 A and includes integrated high-voltage temperature sensing. It provides minimum common mode transient immunity greater than 100 V/ns and complies with ISO 26262 standards.

Feature Summary

• Advanced SPI programmable drive and protection capabilities for optimizing SiC MOSFET switching conditions
• Integrated functional safety features compliant with ISO 26262 for ASIL D applications
• High-voltage isolation with enhanced common mode transient immunity exceeding 100 V/ns

Applications

• Electric vehicle traction inverters
• High-density power conversion systems
• Silicon carbide MOSFET gate driving and protection

Procurement Notes

Verify the specific suffix EKR2 against official NXP documentation to confirm tape-and-reel packaging and exact electrical tolerances. Ensure compatibility with target SiC modules regarding voltage ratings and thermal management requirements before integration.

Selection Notes

Select this component for applications requiring precise control of SiC MOSFETs with integrated fault protection. Consider its SPI interface for dynamic adjustment of drive strength and dead-time settings to minimize switching losses in high-frequency inverter designs.

Part Context

Part of the GD3160 family, which represents an evolution in high-voltage isolated gate drivers. This series integrates advanced features like segmented drive and soft-shutdown to support efficient and safe operation of next-generation electric mobility powertrains.

Replacement Considerations

GD3162 offers dynamic gate strength control for further efficiency improvements. GD3100 serves as a previous generation alternative for IGBT-based applications.