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MGD3160AM335EKT
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Product Detailed Parameters
- Description：IC GATE DRVR HIGH-SIDE 32SOIC
- Series：-
- Mfr：NXP USA Inc.
- Package：Tray
- Driven Configuration：High-Side
- Channel Type：Single
- Number of Drivers：1
- Gate Type：IGBT, SiC MOSFET
- Voltage - Supply：4.5V ~ 40V
- Logic Voltage - VIL, VIH：-
- Current - Peak Output (Source, Sink)：15A, 15A
- Input Type：Non-Inverting
- Rise / Fall Time (Typ)：-
- Operating Temperature：-40°C ~ 125°C (TA)
- Mounting Type：Surface Mount
- Package / Case：32-BSSOP (0.295", 7.50mm Width)
- Supplier Device Package：32-SOIC
- Grade：Automotive
- Qualification：AEC-Q100
- High Side Voltage - Max (Bootstrap)：-
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Overview
The MGD3160AM335EKT is a single-channel high-voltage isolated gate driver designed for automotive traction inverters. It features magnetic isolation with a minimum common-mode transient immunity (CMTI) exceeding 100 V/ns and supports supply voltages from 4.75 V to 40 V. The device delivers a peak output current of 15 A and operates within an ambient temperature range of -40°C to +150°C TJ. Packaged in a 32-SOIC surface-mount format, it is AEC-Q100 qualified and compliant with ISO 26262 functional safety standards.
Feature Summary
- Integrates magnetic high-voltage isolation compatible with 200 to 1700 V IGBT/SiC systems
- Includes integrated current and voltage monitors to protect the high-voltage system
- Supports ASIL D certified advanced safety and protection diagnostics
Applications
- Automotive electric vehicle (EV) traction motor inverters
- High-voltage HEV/ev traction inverters using silicon IGBTs or SiC MOSFETs
- DC/DC converters for electric powertrains
Procurement Notes
Verify the specific suffix against official NXP documentation to confirm package type and reel specifications. Confirm end-of-life status if sourcing legacy inventory. Ensure compatibility with existing PCB footprints and isolation requirements before procurement.
Selection Notes
Select this component for applications requiring robust magnetic isolation and integrated fault management. It is suitable for designs needing programmable drive strength and fast desaturation detection for SiC MOSFETs. Consider thermal performance and SPI configuration capabilities during selection.
Part Context
This part belongs to the GD3160 family of advanced high-voltage gate drivers. It serves as a key component in modern EV powertrain architectures, replacing older discrete solutions by integrating protection and isolation functions into a single chip to reduce bill of materials cost.
Replacement Considerations
Consult official substitution lists for pin-compatible alternatives. Verify that any replacement maintains the required CMTI rating and functional safety certification levels.
