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MGD3160AM518EK
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Product Detailed Parameters
- Description：IC GATE DRVR HIGH-SIDE 32SOIC
- Series：-
- Mfr：NXP USA Inc.
- Package：Tube
- Driven Configuration：High-Side
- Channel Type：Single
- Number of Drivers：1
- Gate Type：IGBT, SiC MOSFET
- Voltage - Supply：4.5V ~ 40V
- Logic Voltage - VIL, VIH：-
- Current - Peak Output (Source, Sink)：15A, 15A
- Input Type：Non-Inverting
- Rise / Fall Time (Typ)：-
- Operating Temperature：-40°C ~ 125°C (TA)
- Mounting Type：Surface Mount
- Package / Case：32-BSSOP (0.295", 7.50mm Width)
- Supplier Device Package：32-SOIC
- Grade：Automotive
- Qualification：AEC-Q100
- High Side Voltage - Max (Bootstrap)：-
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Overview
The MGD3160AM518EK is a single-channel high-voltage isolated gate driver from NXP Semiconductors, belonging to the GD3160 series. Designed for SiC MOSFET and IGBT applications, it features a 32-SOIC surface-mount package. The device provides a peak output current of 15 A with a non-inverting configuration. It operates on a supply voltage range of 4.75 V to 40 V and supports a wide operating temperature range from -40°C to +150°C. The component is AEC-Q100 qualified and utilizes magnetic coupling technology for signal isolation.
Feature Summary
- Integrates magnetic coupling technology for high-speed signal transmission and robust electrical isolation between control and power domains.
- Delivers a peak drive current of 15 A to efficiently switch high-power SiC MOSFETs and IGBTs in demanding environments.
- Supports extended thermal operation up to 150°C, ensuring reliability in high-temperature automotive and industrial systems.
Applications
- Electric vehicle traction inverters
- On-board chargers (OBC)
- Industrial motor drives
Procurement Notes
Verify the specific suffix '518' against official documentation to confirm exact isolation specifications and pinout compatibility. Check current availability status as supply constraints may apply. Ensure the selected variant matches the required isolation voltage and package dimensions for the target PCB layout.
Selection Notes
Select this component when a single-channel driver with 15 A peak current and magnetic isolation is required. It is suitable for designs needing AEC-Q100 qualification and operation up to 150°C. Compare against other GD3160 variants to ensure the specific isolation rating and package type align with system safety and mechanical requirements.
Part Context
This part belongs to the GD3160 family of advanced high-voltage isolated gate drivers. The series is engineered for next-generation electric vehicle powertrains and industrial converters. It combines SPI programmability with integrated protection features to optimize switching performance and enhance system safety for silicon carbide devices.
Replacement Considerations
Other GD3160 variants such as MGD3160AM335EK or MGD3160AM535EK share the same core architecture and package. Verify if differences in isolation voltage ratings or specific feature configurations allow for direct substitution without circuit redesign.
