MGD3160AM535EKT

MGD3160AM535EKT

$8.15
  • Description:IC GATE DRVR HIGH-SIDE 32SOIC
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tray

SKU:0e22400c78f6 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR HIGH-SIDE 32SOIC
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tray
  • Driven Configuration:High-Side
  • Channel Type:Single
  • Number of Drivers:1
  • Gate Type:IGBT, SiC MOSFET
  • Voltage - Supply:4.5V ~ 40V
  • Logic Voltage - VIL, VIH:-
  • Current - Peak Output (Source, Sink):15A, 15A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):-
  • Operating Temperature:-40°C ~ 125°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:32-BSSOP (0.295", 7.50mm Width)
  • Supplier Device Package:32-SOIC
  • Grade:Automotive
  • Qualification:AEC-Q100
  • High Side Voltage - Max (Bootstrap):-

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MGD3160AM535EKT

Overview

The MGD3160AM535EKT is a single-channel high-voltage isolated gate driver designed for SiC MOSFETs and IGBTs. It features a 15A load current, 500mΩ RDS(ON), and operates on a 4.5V to 40V supply. The device provides ±15A split output gate drive and includes a programmable HV VCC regulator from 14V to 21V. Key protections include <1.2µs DeSat detection, two-level turn-off, and soft-shutdown. It offers >100V/ns CMTI and 5000Vrms isolation in a 32-SOIC package.

Feature Summary

  • Advanced segmented drive architecture with SPI programmability for optimizing SiC MOSFET switching conditions
  • Integrated high-voltage fault management (FSISO) and temperature sensing for enhanced system protection
  • High common-mode transient immunity exceeding 100V/ns with robust electrical isolation capabilities

Applications

  • xEV traction inverters requiring ASIL D compliance
  • On-board chargers (OBC) utilizing SiC or IGBT modules
  • DC-DC converters demanding high power density and fast fault response

Procurement Notes

Verify the specific suffix EKT against official NXP documentation to confirm tape-and-reel packaging configuration. Ensure compatibility with ISO 26262 functional safety requirements for your target application. Cross-reference the 32-SOIC package dimensions with your PCB layout constraints. Confirm RoHS and REACH compliance status for regulatory adherence in your region.

Selection Notes

Select this component when driving SiC MOSFETs or IGBTs in high-voltage environments requiring precise control. The integrated SPI interface allows dynamic adjustment of drive strength and protection thresholds. Consider the 15A peak current capability and fast DeSat detection for applications prioritizing efficiency and reliability over simple switching needs.

Part Context

Part of the GD3160 family, an advanced isolated gate driver series. Designed specifically for next-generation electric vehicle powertrains and industrial power conversion systems. Integrates functional safety features to reduce bill-of-materials complexity while supporting high-power-density designs compliant with automotive standards.

Replacement Considerations

Consult official substitution lists for equivalent GD3160 variants. Verify pinout and electrical parameter compatibility before replacing existing components in production designs.

MGD3160AM535EKTMGD3160AM535EKT
$8.15
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