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MGD3160AM538EKR2
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Product Detailed Parameters
- Description：IC GATE DRVR HIGH-SIDE 32SOIC
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Driven Configuration：High-Side
- Channel Type：Single
- Number of Drivers：1
- Gate Type：IGBT, SiC MOSFET
- Voltage - Supply：4.5V ~ 40V
- Logic Voltage - VIL, VIH：-
- Current - Peak Output (Source, Sink)：15A, 15A
- Input Type：Non-Inverting
- Rise / Fall Time (Typ)：-
- Operating Temperature：-40°C ~ 125°C (TA)
- Mounting Type：Surface Mount
- Package / Case：32-BSSOP (0.295", 7.50mm Width)
- Supplier Device Package：32-SOIC
- Grade：Automotive
- Qualification：AEC-Q100
- High Side Voltage - Max (Bootstrap)：-
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Overview
The MGD3160AM538EKR2 is a single-channel high-voltage isolated gate driver from the GD3160 series, manufactured by NXP Semiconductors. It utilizes magnetic coupling technology to provide electrical isolation for driving Silicon Carbide (SiC) MOSFETs and Silicon IGBTs in automotive applications. The device features a load current of 15A typical, with a drain-to-source on-resistance of 500 mOhms typical. It operates within an ambient temperature range of -40°C to 125°C and supports supply voltages from 4.5V to 40V. The component is housed in a 32-SOIC package.
Feature Summary
- Integrates advanced functional safety features compliant with ISO 26262 standards to support ASIL D requirements.
- Features SPI programmability for optimized drive conditions, protection thresholds, and fault reporting.
- Includes integrated high-voltage temperature sensing and fast Vce desat detection for enhanced system protection.
Applications
- High-voltage HEV/EV traction inverters
- DC/DC converters using SiC MOSFETs or Si IGBTs
- Automotive powertrain systems
Procurement Notes
Verify the specific suffix against official documentation to confirm packaging type and availability status. Ensure compatibility with required isolation voltage ratings and interface protocols before integration. Confirm RoHS compliance and automotive qualification status through the manufacturer's datasheet.
Selection Notes
Select this component for applications requiring high-density integration of gate driving and protection functions. Consider its SPI configurability for adapting to various SiC or IGBT module characteristics. Evaluate the need for integrated functional safety mechanisms when designing ASIL D compliant systems.
Part Context
This part belongs to the GD3160 family of advanced high-voltage isolated gate drivers designed specifically for electric vehicle powertrains. The series emphasizes reduced bill of materials cost and board space by integrating monitoring and safety logic directly into the driver IC.
Replacement Considerations
Consult official substitution lists for verified alternatives. Generic replacements may lack the specific SPI programmability or integrated safety features required for ASIL D compliance.
