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MGD3162AM580EKR2
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Product Detailed Parameters
- Description：IC GATE DRVR
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Driven Configuration：-
- Channel Type：-
- Number of Drivers：-
- Gate Type：-
- Voltage - Supply：-
- Logic Voltage - VIL, VIH：-
- Current - Peak Output (Source, Sink)：-
- Input Type：-
- Rise / Fall Time (Typ)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：-
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Overview
The MGD3162AM580EKR2 is an advanced, galvanically isolated single-channel gate driver designed for xEV traction inverters. It features magnetic coupling technology with a maximum output voltage of 25 V and insulation voltage of 8 kVrms. The device operates within a temperature range of -40°C to +150°C and is housed in a 32-SOIC package. It supports AEC-Q100 Grade 1 qualification and includes dynamic gate strength adjustment capabilities.
Feature Summary
- Integrated boost capability enables direct driving of SiC MOSFET and IGBT module gates without external components.
- Dynamic gate strength control allows independent optimization of turn-on and turn-off drive currents via SPI or pins.
- Autonomous fault management provides rapid desaturation detection and status reporting through dedicated interrupt pins.
Applications
- Third-generation electric vehicle traction inverters
- Silicon carbide (SiC) power module switching
- Insulated gate bipolar transistor (IGBT) module switching
Procurement Notes
Verify the specific suffix EKR2 against official NXP documentation to confirm reel packaging and tape specifications. Ensure compatibility with ASIL C/D functional safety requirements by reviewing the full system context. Confirm that the 8 kVrms isolation rating meets the specific application's creepage and clearance standards.
Selection Notes
Select this component when high-speed switching performance and precise gate current shaping are required for wide-bandgap devices. The integrated boost feature simplifies design by eliminating external bootstrap circuits. Verify that the 32-SOIC footprint aligns with the target PCB layout constraints and thermal management strategy.
Part Context
This part belongs to the GD3162 series, which replaces previous generations like the GD3160 in modern EV architectures. It is optimized for 800V SiC-based systems, offering improved efficiency and reduced voltage stress compared to standard drivers. The series supports migration from older MCU and SBC platforms to enhanced control solutions.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Designers should consult NXP for qualified alternatives if supply constraints exist.
