ChipApex | Global Electronic Components Supplier
MGD3162AM580EKT
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IC GATE DRVR
- Series：-
- Mfr：NXP USA Inc.
- Package：Tray
- Driven Configuration：-
- Channel Type：-
- Number of Drivers：-
- Gate Type：-
- Voltage - Supply：-
- Logic Voltage - VIL, VIH：-
- Current - Peak Output (Source, Sink)：-
- Input Type：-
- Rise / Fall Time (Typ)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：-
Download product information
Overview
The MGD3162AM580EKT is an advanced current-isolated single-channel gate driver designed for xEV traction inverters using SiC and IGBT modules. It features a SOIC-32 SMD package with one channel, offering 8 kVrms insulation voltage and operation from -40°C to +150°C. The device provides a maximum output voltage of 25 V and includes integrated boost capability for up to 30A pull/push currents. It supports SPI programmable dynamic gate strength, fast VCE DeSat detection under 1µs, and two-level turn-off protection.
Feature Summary
- Dynamic gate strength control via SPI interface for optimized switching performance
- Integrated high-voltage temperature sensing (TSENSE) with programmable offset and gain
- Autonomous fault management with status reporting via interrupt pins
- Designed for ASIL C/D functional safety compliance
Applications
- xEV traction inverter systems
- SiC MOSFET gate driving applications
- IGBT module drive circuits
- High-power automotive power electronics
Procurement Notes
Verify the specific suffix AM580EKT against the manufacturer's official ordering information to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets the required AEC-Q100 Grade 1 qualification standards for your specific automotive application environment. Cross-reference the datasheet revision to ensure compatibility with your system design requirements.
Selection Notes
Select this component when dynamic gate strength adjustment is required to minimize switching losses and voltage stress in SiC or IGBT modules. Ensure the design accommodates the SPI interface for programmability and utilizes the integrated boost capability for direct gate driving. Verify that the SOIC-32 package fits within the thermal and spatial constraints of the inverter design while meeting the 8 kVrms isolation requirement.
Part Context
This part belongs to the GD3162 series of advanced gate drivers from NXP Semiconductors. It represents an evolution from previous generations like the GD3160, adding dynamic gate strength capabilities and enhanced monitoring features. The series is specifically engineered to address the efficiency and safety demands of modern electric vehicle powertrains, supporting both SiC and IGBT technologies.
Replacement Considerations
The GD3160 is a related predecessor in the same family but lacks dynamic gate strength adjustment. Direct substitution requires verifying if the fixed drive strength of the GD3160 meets the switching performance requirements of the target SiC or IGBT modules without the benefit of programmable optimization.
