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MGD3162AM581EKR2
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Product Detailed Parameters
- Description：IC GATE DRVR
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Driven Configuration：-
- Channel Type：-
- Number of Drivers：-
- Gate Type：-
- Voltage - Supply：-
- Logic Voltage - VIL, VIH：-
- Current - Peak Output (Source, Sink)：-
- Input Type：-
- Rise / Fall Time (Typ)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：-
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Overview
The MGD3162AM581EKR2 is a galvanically isolated, single-channel gate driver from NXP Semiconductors, designed for xEV traction inverters. It utilizes magnetic coupling technology to drive SiC and IGBT modules. The device operates within a supply voltage range of 12V to 25V and features an isolation voltage of 8000Vrms. It offers a minimum common-mode transient immunity of 100V/ns. The component supports surface mount installation in a 32-SOIC package and functions across a temperature range of -40°C to +150°C.
Feature Summary
- Galvanic isolation via magnetic coupling technology
- Optimized for driving SiC and IGBT modules
- High common-mode transient immunity
- Automotive grade reliability certification
Applications
- xEV traction inverters
- SiC module gate driving
- IGBT module gate driving
Procurement Notes
Verify the specific ordering suffix against official NXP documentation to ensure correct packaging and variant selection. Confirm that the requested part matches the required automotive qualification standards and isolation specifications for your application. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and current availability status before finalizing procurement orders.
Selection Notes
Select this component when high-voltage isolation and fast switching capabilities are required for electric vehicle power stages. Ensure the design accommodates the 32-SOIC footprint and thermal requirements for operation up to 150°C. Verify compatibility with the target SiC or IGBT module drive characteristics and confirm that the system architecture supports the necessary control signal inputs for single-channel operation.
Part Context
This part belongs to the GD3162 series of advanced gate drivers. It represents NXP's solution for next-generation electric vehicle powertrains, focusing on efficiency and reliability. The series is engineered to meet the stringent demands of modern traction inverter designs, providing robust performance in harsh automotive environments while maintaining precise control over wide-bandgap semiconductor devices.
Replacement Considerations
Consult official substitution lists for compatible variants within the GD3162 family. Verify pinout and electrical parameter equivalence before replacing existing components in production designs.
