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Product Detailed Parameters
- Description:IC GATE DRVR
- Series:-
- Mfr:NXP USA Inc.
- Package:Tray
- Driven Configuration:-
- Channel Type:-
- Number of Drivers:-
- Gate Type:-
- Voltage - Supply:-
- Logic Voltage - VIL, VIH:-
- Current - Peak Output (Source, Sink):-
- Input Type:-
- Rise / Fall Time (Typ):-
- Operating Temperature:-
- Mounting Type:-
- Package / Case:-
- Supplier Device Package:-
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The MGD3162AM581EKT is a current-isolated single-channel gate driver from the GD3162 series, designed for xEV traction inverters. It features an SOIC-32 package with one channel and operates within a temperature range of -40°C to +150°C. The device provides an insulation voltage of 8 kVrms and a maximum output voltage of 25 V.
Feature Summary
- Optimized SiC & IGBT GDIC for xEV traction inverters
- Advanced high-voltage isolated gate driver with dynamic gate strength control
- Integrated boost capability for direct driving of power modules
Applications
- xEV traction inverters
- SiC MOSFET gate driving
- IGBT gate driving
Procurement Notes
Verify the specific suffix 'M581' against official NXP documentation to confirm exact ordering details, as suffixes often denote tape-and-reel packaging or specific quality grades. Ensure compatibility with the GD3162 family specifications before procurement.
Selection Notes
Select this component for applications requiring advanced isolation and dynamic gate strength adjustment in electric vehicle powertrains. It supports both SiC and IGBT technologies, offering programmable protection and functional safety features suitable for ASIL C/D systems.
Part Context
This part belongs to the GD3162 series of advanced gate drivers. It is engineered to replace previous generations like the GD3160, providing improved efficiency through dynamic gate strength control and additional system functions such as power device health monitoring.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided data.
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