MGS801

RF Diode Overview

The MGS801 is a Gallium Arsenide (GaAs) Schottky diode belonging to the MGS8xx/MGS9xx series, designed for millimeter-wave components operating up to 60 GHz. It features a single junction configuration in a flip chip package with outline GC110. Electrical characteristics at TA = +25°C include a forward voltage (VF) range of 650 mV to 750 mV and a breakdown voltage (VBR) minimum of 5 V. The device exhibits a junction capacitance (CJ) maximum of 0.05 pF and a series resistance (RS) maximum of 7 Ω. Absolute maximum ratings specify a reverse voltage rated Vbr, a forward current of 50 mA, and DC power dissipation of 75 mW per junction.

RF Diode Feature Summary

• Optimized performance for millimeter-wave applications up to 60 GHz
• Available in beam lead, flip chip, or packaged configurations
• High-reliability screening options available per MIL-PRF-19500 and MIL-PRF-38534

RF Diode Applications

• Millimeter wave components
• High frequency circuit design

RF Diode Procurement Notes

Verify specific ordering suffixes and packaging details directly with MACOM or authorized distributors. Confirm availability status as products may be subject to factory special orders. Ensure compliance with environmental directives such as RoHS if required by the application. Request updated datasheets prior to final design implementation.

RF Diode Selection Notes

Select the MGS801 for single junction GaAs Schottky requirements in high-frequency environments. Compare junction capacitance and series resistance against system impedance matching needs. Consider alternative models like MGS801A if lower series resistance is critical. Evaluate thermal management capabilities within the specified operating temperature range.

RF Diode Part Context

Part of the MGS8xx/MGS9xx series offering 14 different configurations including anti-parallel pairs, series tees, and ring-quads. The series utilizes GaAs technology for superior high-frequency performance compared to silicon alternatives.

RF Diode Replacement Considerations

MGS801A serves as a direct variant with identical electrical parameters but reduced series resistance (max 5 Ω vs 7 Ω). Both share the same GC110 outline and single junction configuration.

RF Diode FAQ

What is the maximum operating temperature for the MGS801?

The absolute maximum operating temperature range is -65°C to +150°C.

Does the MGS801 support high-reliability screening?

Yes, high-reliability screening per MIL-PRF-19500 and MIL-PRF-38534 is available for this component.