SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MGV125-08 is a Gallium Arsenide hyperabrupt varactor diode from the MGV125-x Series, featuring a constant gamma of 1.25 and passivated mesa construction for low leakage. It operates within a tuning voltage range of 0 to 22 V. At a reverse bias of 4 V and 1 MHz, the total capacitance ranges from 0.25 pF (min) to 0.35 pF (max), with a nominal value of 0.30 pF. The device provides a typical tuning ratio of 5.0 between 2 V and 12 V, and up to 10 between 2 V and 20 V. The quality factor is specified at a minimum of 4,000 at 4 V and 50 MHz.
Verify component authenticity by cross-referencing the manufacturer marking code against official MACOM documentation. Confirm that the specific ordering suffix matches the required package style or screening level. Ensure compliance with RoHS directives as stated in the datasheet. Request detailed test reports if military screening per MIL-PRF-19500 is required for the application environment.
Select this model when a nominal capacitance near 0.30 pF is required for high-frequency applications. The 1.25 constant gamma profile suits designs needing moderate linearity compared to the 0.75 or 1.0 families. Evaluate the packaging option; bare die offers optimal RF performance, while packaged versions introduce parasitic inductance and capacitance values listed in the datasheet outline drawings.
This component belongs to the MGV125-x Series of GaAs hyperabrupt varactors. The series includes variants with different nominal capacitances and package styles, such as E28, H20, P55, and 0805-2. Other gamma options are available in the MGV075-x and MGV100-x families for distinct tuning curve requirements.
Direct replacements include other models within the MGV125-x Series with similar capacitance values, such as MGV125-09. For different gamma characteristics, consider the MGV075-x or MGV100-x series. Verify that any substitute maintains the required Q factor and tuning ratio specifications for the target frequency band.