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The MI3060C-E3/4W is a dual common cathode Schottky rectifier manufactured by Vishay General Semiconductor - Diodes Division. It utilizes the TO-262AA (TO-262AA) surface-mount package and features Guardring technology for overvoltage protection. The device supports a maximum repetitive peak reverse voltage of 60 V and provides a total maximum average forward rectified current of 30 A, with 15 A per diode. It exhibits a low instantaneous forward voltage drop of 0.547 V at 15 A and 125 °C, alongside a peak forward surge current capability of 160 A.
Verify the specific package variant during procurement, as the MI3060C designation corresponds to the TO-262AA form factor, distinct from the M3060C through-hole version. Confirm RoHS compliance via the E3 suffix and ensure the ordering code matches the required tube packaging quantity. Cross-reference datasheet document number 89009 for accurate technical specifications before finalizing component selection.
Select this component when a surface-mount dual Schottky configuration is required for 60 V applications. The TO-262AA package offers thermal performance comparable to larger through-hole alternatives while saving board space. Ensure the application operates within the specified junction temperature range of -65 °C to +150 °C and accounts for the 2.0 °C/W thermal resistance per diode for proper heat dissipation planning.
This part belongs to the M3060C/MI3060C series of dual common cathode Schottky rectifiers. It shares identical electrical characteristics with the M3060C but differs in mechanical mounting style. The series is designed for general-purpose high-efficiency rectification, leveraging Trench MOS Barrier Schottky technology to achieve superior switching performance compared to standard silicon rectifiers.
The M3060C-E3/4W serves as the direct through-hole equivalent with identical electrical ratings. Verify pinout compatibility if substituting between TO-220AB and TO-262AA packages, as lead configurations differ despite shared terminal functions.