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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8SOIC
- Series:-
- Mfr:Microchip Technology
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel, P-Channel)
- Voltage - Supply:4.5V ~ 20V
- Logic Voltage - VIL, VIH:0.8V, 2.4V
- Current - Peak Output (Source, Sink):3A, 3A
- Input Type:Inverting
- Rise / Fall Time (Typ):11ns, 11ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package:8-SOIC-EP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The MIC4123YME-TR is a dual low-side MOSFET gate driver from the Microchip MIC4123/4124/4125 family. It features a BiCMOS/DMOS architecture with independent channels capable of sourcing and sinking 3A peak output current. The device operates within a supply voltage range of 4.5V to 20V and supports logic input thresholds of 0.8V (VIL) and 2.4V (VIH). Typical rise and fall times are 11ns, with a propagation delay of 44ns. It is housed in an 8-SOIC package with an exposed pad (SOIC-8EP) for thermal management.
Feature Summary
- Dual independent channel configuration for driving two N-channel or P-channel MOSFETs
- High-speed switching capability with 11ns typical transition times
- Robust 3A peak source and sink output current drive
- Integrated transient protection mechanisms
Applications
- Low-side power switching in motor control systems
- DC-DC converter gate drive stages
- General-purpose high-speed MOSFET switching applications
Procurement Notes
Verify the specific suffix 'TR' indicates tape and reel packaging when ordering. Confirm the manufacturer designation as Microchip Technology, noting the component's lineage from Micrel. Ensure the 8-SOIC-EP package variant matches the design footprint requirements. Check RoHS compliance status against current environmental regulations.
Selection Notes
Select this component for applications requiring asymmetric or independent control of two low-side switches. The 3A drive strength suits medium-power MOSFETs where faster switching reduces conduction losses. Consider the exposed pad requirement for adequate thermal dissipation during continuous operation at elevated temperatures up to 125°C junction temperature.
Part Context
This part belongs to the MIC412x series, which includes variants like the MIC4124 and MIC4125. These devices share similar BiCMOS/DMOS technology but differ in internal configurations such as inverting versus non-inverting outputs. The MIC4123 specifically provides dual low-side drivers, distinguishing it from half-bridge or single-channel alternatives in the same product family.
Replacement Considerations
Direct substitutes include other parts from the MIC4123/4124/4125 family depending on logic inversion needs. Verify pinout compatibility with the 8-SOIC-EP package before substitution.
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