MIC4123YME

Overview

The MIC4123YME is a dual low-side MOSFET gate driver manufactured by Microchip Technology. It features an inverting logic configuration and delivers a peak output current of 3 A with a typical rise and fall time of 11 ns. The device operates within a supply voltage range of 4.5 V to 20 V and draws a quiescent current of 2.5 mA. It is housed in an 8-pin SOIC package with exposed pad (SOIC-8-EP) and supports an operating temperature range from -40 °C to +125 °C.

Feature Summary

• Dual channel architecture providing independent control for two low-side MOSFETs
• High-speed switching capability with 11 ns typical rise and fall times
• Robust 3 A peak output current drive strength
• Inverting input logic configuration

Applications

• Low-side power switching in motor control systems
• DC-DC converter gate driving applications
• General purpose high-speed MOSFET switching circuits

Procurement Notes

Verify the specific suffix 'YME' corresponds to the SOIC-8-EP package variant. Confirm RoHS compliance status as indicated by manufacturer documentation. Ensure the inverting configuration aligns with system logic requirements before procurement.

Selection Notes

Select this component when dual low-side driving with inverting logic is required. The 3 A output current suits medium-power MOSFETs. Consider thermal performance due to the exposed pad design for heat dissipation in high-frequency switching environments.

Part Context

This part belongs to the MIC4123/4124/4125 family of BiCMOS/DMOS drivers. It serves as a higher current alternative to the MIC4126/4127/4128 series, offering improved drive capability for demanding power management applications.

Replacement Considerations

MIC4124YME is a non-inverting equivalent within the same family. MIC4125YME offers complementary functionality. Verify pinout compatibility and logic inversion state when substituting.