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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8SOIC
- Series:-
- Mfr:Microchip Technology
- Package:Tube
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:4.5V ~ 20V
- Logic Voltage - VIL, VIH:0.8V, 2.4V
- Current - Peak Output (Source, Sink):1.5A, 1.5A
- Input Type:Inverting
- Rise / Fall Time (Typ):20ns, 18ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package:8-SOIC-EP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The MIC4126YME is a dual low-side MOSFET gate driver manufactured by Microchip Technology. It features two independent inverting outputs capable of sourcing and sinking 1.5A peak current. The device operates within a supply voltage range of 4.5V to 20V. Key electrical parameters include a typical rise time of 20ns, fall time of 18ns, and propagation delay of 37ns. Logic thresholds are defined at 0.8V for VIL and 2.4V for VIH. It is housed in an 8-SOIC-EP package with an exposed pad for thermal management.
Feature Summary
- Dual channel configuration providing independent control for two N-channel MOSFETs
- Inverting logic input interface for straightforward digital control integration
- High peak output current capability of 1.5A for rapid switching transitions
- Exposed pad design on the SOIC package to enhance thermal dissipation
Applications
- Low-side switching in DC-DC converter topologies
- Motor control circuits requiring precise gate drive signals
- Power supply systems utilizing N-channel MOSFET arrays
- Industrial automation equipment power stages
Procurement Notes
Verify the specific suffix 'YME' corresponds to the standard tube packaging variant rather than the tape-and-reel option. Confirm the presence of the exposed thermal pad (EP) in the package designation to ensure compatibility with PCB thermal vias. Check RoHS compliance status as indicated in the official datasheet before finalizing procurement orders.
Selection Notes
Select this component when dual low-side driving is required with moderate speed and high current capacity. The inverting logic simplifies control schemes where active-low signals are preferred. Ensure the application voltage remains within the 4.5V to 20V range. Consider the SOIC-8-EP footprint for adequate heat dissipation during continuous operation.
Part Context
This part belongs to the MIC4126 series of advanced packaging gate drivers. It complements other variants like the MIC4126YML-TR which offers similar functionality in a different package format. The series is designed for general-purpose power management applications requiring reliable MOSFET switching performance.
Replacement Considerations
The MIC4126YML-TR serves as a functional substitute with identical electrical characteristics but differs in packaging and reel quantity. Verify pinout compatibility and thermal requirements when substituting between SOIC and DFN formats.
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