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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8DIP
- Series:-
- Mfr:Microchip Technology
- Package:Bulk
- Driven Configuration:Low-Side
- Channel Type:Single
- Number of Drivers:1
- Gate Type:IGBT, MOSFET (N-Channel)
- Voltage - Supply:4.5V ~ 18V
- Logic Voltage - VIL, VIH:0.8V, 2.4V
- Current - Peak Output (Source, Sink):9A, 9A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):20ns, 24ns
- Operating Temperature:0°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:8-DIP (0.300", 7.62mm)
- Supplier Device Package:8-PDIP
- High Side Voltage - Max (Bootstrap):-
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Overview
The MIC4422CN is a single-channel, low-side MOSFET gate driver manufactured by Microchip Technology. It operates within a supply voltage range of 4.5 V to 18 V and delivers a peak output current of 9 A. The device features non-inverting logic configuration with typical rise and fall times of 20 ns and 24 ns respectively. Designed for surface-mount applications, it utilizes an 8-pin SOIC package. The component supports operation across an extended temperature range from -40°C to +85°C, ensuring reliable performance in various industrial environments.
Feature Summary
- Delivers high peak source and sink currents of 9 A for rapid MOSFET switching
- Features non-inverting input logic compatible with standard CMOS and TTL levels
- Provides fast propagation delays with symmetric rise and fall times for precise timing control
Applications
- Power supply circuits requiring efficient MOSFET gate driving
- Motor control systems utilizing low-side switching configurations
- Industrial automation equipment needing robust power management ICs
Procurement Notes
Verify the specific suffix 'CN' against official Microchip documentation to confirm package type and temperature grade. Ensure compatibility with existing PCB footprints for SOIC-8 packages. Check for moisture sensitivity level requirements during storage and handling. Confirm that the non-inverting logic aligns with system control signals. Validate operating temperature ranges against environmental conditions.
Selection Notes
Select this component when a single low-side driver with high current capability is required. Consider the 9 A output strength for driving larger MOSFETs efficiently. Evaluate the 4.5 V to 18 V supply range against available power rails. Assess the 20/24 ns transition speeds against switching frequency demands. Compare thermal dissipation capabilities within the SOIC-8 package constraints.
Part Context
This part belongs to the MIC4422 series of MOSFET gate drivers. It complements other variants like MIC4422YM and MIC4422AYM which share similar electrical characteristics but differ in packaging or temperature ratings. The series is designed for general-purpose power switching applications where fast response and high drive current are critical for system efficiency.
Replacement Considerations
MIC4422YM-TR offers identical electrical specifications in a tape-and-reel SOIC-8 package. MIC4422AYM-TR provides similar performance with potentially different manufacturing lot characteristics. TC4422VPA serves as a legacy alternative with comparable 9 A drive capability in a PDIP package.
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