MIC4423YN

MIC4423YN

$2.19
  • Description:IC GATE DRVR LOW-SIDE 8DIP
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tube

SKU:ea4b9fe3047c Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR LOW-SIDE 8DIP
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tube
  • Driven Configuration:Low-Side
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:MOSFET (N-Channel, P-Channel)
  • Voltage - Supply:4.5V ~ 18V
  • Logic Voltage - VIL, VIH:0.8V, 2.4V
  • Current - Peak Output (Source, Sink):3A, 3A
  • Input Type:Inverting
  • Rise / Fall Time (Typ):28ns, 32ns
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:8-DIP (0.300", 7.62mm)
  • Supplier Device Package:8-PDIP
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):-

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MIC4423YN

Overview

The MIC4423YN is a dual low-side MOSFET gate driver manufactured by Microchip Technology. It features two independent drivers with inverting logic configuration, housed in an 8-pin PDIP package. The device supports a supply voltage range of 4.5 V to 18 V and delivers a peak output current of 3 A per channel. Key electrical parameters include a rise time of 12 ns and a fall time of 12 ns. It operates within a temperature range of -40°C to +85°C and has a maximum power dissipation of 960 mW.

Feature Summary

  • Dual-channel architecture providing independent control for two low-side MOSFETs
  • Inverting logic configuration for straightforward interface with standard logic families
  • High-speed switching capability with 12 ns rise and fall times
  • Robust 3 A peak output current drive capability

Applications

  • Motor control systems requiring dual low-side switching
  • Power supply circuits utilizing half-bridge or full-bridge topologies
  • Industrial automation equipment driving MOSFET loads

Procurement Notes

Verify the specific suffix 'YN' corresponds to the PDIP-8 through-hole package variant when sourcing. Confirm that the inverting logic configuration aligns with the system design requirements, as non-inverting variants exist within the same family. Ensure the operating environment remains within the specified -40°C to +85°C temperature range to maintain performance specifications.

Selection Notes

Select this component when dual isolated low-side drive signals are required with inverting functionality. The 3 A output current is suitable for medium-power MOSFET applications. Consider the 12 ns switching speed for high-frequency operations. Verify compatibility with the input logic levels, as the device accepts CMOS and TTL inputs. Evaluate thermal management needs given the 960 mW power dissipation limit in the PDIP package.

Part Context

The MIC4423YN belongs to the MIC4423 series of high-speed MOSFET gate drivers. This series is designed for efficient switching of power MOSFETs in various electronic applications. The device integrates protection features typical of the family, such as shoot-through prevention, although specific details should be confirmed in the official datasheet. It serves as a critical interface between low-voltage control logic and high-power switching elements.

Replacement Considerations

The TC4423EPA is a documented substitute offering identical 3 A dual low-side drive capabilities in a PDIP-8 package. Both devices share similar electrical characteristics, including 12 ns rise/fall times and 4.5 V to 18 V supply ranges. Verify pinout compatibility and logic inversion alignment before substitution.

MIC4423YNMIC4423YN
$2.19
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