MIC4423YWM

Overview

The MIC4423YWM is a dual low-side gate driver manufactured by Microchip Technology. It features a BiCMOS/DMOS construction designed for driving power MOSFETs and IGBTs. The device operates within a supply voltage range of 4.5V to 18V. It provides a peak output current of 3A with propagation delays of approximately 33ns. The package is a 16-SOIC surface-mount configuration.

Feature Summary

• Dual channel inverting gate driver architecture
• High peak output current capability of 3A
• Latch-up protection against reverse current
• Logic input tolerance extending to -5V

Applications

• Power MOSFET gate driving
• IGBT switching applications
• DC-DC converter control circuits

Procurement Notes

Verify the specific suffix 'YWM' corresponds to the 16-SOIC package variant when sourcing. Confirm that the '-TR' designation indicates tape-and-reel packaging if reel quantity is required. Ensure the supplier provides official Microchip documentation to validate the BiCMOS construction details and electrical specifications.

Selection Notes

Select this component for applications requiring dual low-side drive with high peak current. The wide supply voltage range supports various logic levels. Consider the 16-SOIC footprint for PCB layout constraints. Verify thermal requirements for continuous operation at peak currents.

Part Context

This part belongs to the MIC4423/4424/4425 series of highly reliable buffer/driver/MOSFET drivers from Microchip Technology. These devices are engineered for robust performance in power electronics, offering superior drive strength compared to standard logic buffers while maintaining low power consumption.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Consult Microchip Technology directly for qualified alternatives or cross-reference options based on specific pinout and electrical parameter compatibility.