MIC4479YME-T5

Overview

The MIC4479YME-T5 is a low-side gate driver IC manufactured by Microchip Technology, designed for driving N-Channel MOSFETs in power management applications. It features an inverting configuration and operates within a maximum supply voltage of 32 V. The device provides dual independent channels capable of driving a capacitive load of 1,000 pF with a transition time of 45 ns. Packaged in an 8-SOIC (EP) case, it supports lead-free and RoHS compliant manufacturing standards.

Feature Summary

• Low-side gate driver architecture optimized for N-Channel MOSFET control
• Inverting signal configuration for precise switching logic
• Dual independent channel design for flexible power stage implementation

Applications

• Power management systems requiring low-side switching
• N-Channel MOSFET gate drive circuits
• Industrial motor control interfaces

Procurement Notes

Verify the specific suffix T5 indicates tape and reel packaging when sourcing. Confirm the 8-SOIC-EP package variant matches your PCB footprint requirements. Ensure compatibility with the 32 V maximum supply voltage limit for your target application circuit design.

Selection Notes

Select this component for applications requiring a dedicated low-side driver with inverting logic. The dual-channel capability allows for driving two separate MOSFETs independently. Verify that the 45 ns transition time meets the switching frequency requirements of your power stage design.

Part Context

This part belongs to the MIC4479 series of gate drivers from Microchip Technology. It is specifically engineered as a low-side driver, distinguishing it from high-side or half-bridge variants within the broader product family. The EP suffix denotes an exposed pad for thermal enhancement.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult official Microchip resources for qualified alternatives.