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Product Detailed Parameters
- Description:IC GATE DRVR HI/LOW SIDE 8DIP
- Series:-
- Mfr:Microchip Technology
- Package:Tube
- Driven Configuration:High-Side or Low-Side
- Channel Type:Single
- Number of Drivers:1
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:2.75V ~ 30V
- Logic Voltage - VIL, VIH:0.8V, 2V
- Current - Peak Output (Source, Sink):-
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):-
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:8-DIP (0.300", 7.62mm)
- Supplier Device Package:8-PDIP
- High Side Voltage - Max (Bootstrap):-
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Overview
The MIC5014BN is a low-cost high-side or low-side MOSFET driver designed for gate control of N-channel, enhancement-mode power MOSFETs. It operates from a supply voltage range of 2.75V to 30V and features an internal charge pump for high-side applications. The device draws a maximum supply current of 100µA at a 5V supply and has a typical off-state current of 15µA. It is available in an 8-DIP (0.300", 7.62mm) package with through-hole mounting and supports an operating temperature range of -40°C to 150°C (TJ).
Feature Summary
- Internal charge pump enables high-side N-channel MOSFET control without external bootstrap components.
- Wide supply voltage operation supports loads up to 30V in both high-side and low-side configurations.
- Low quiescent current consumption minimizes power loss in battery-powered or standby modes.
Applications
- Gate drive control for N-channel power MOSFETs in switching regulators.
- High-side load switching in automotive and industrial systems.
- Low-side switch drivers for motor control and relay applications.
Procurement Notes
Verify the manufacturer origin, as the MIC5014 series was originally developed by Micrel Semiconductor before its acquisition by Microchip Technology. Ensure the part number suffix 'BN' corresponds to the 8-DIP package variant. Confirm that the component meets the specified -40°C to 150°C junction temperature range for your thermal design requirements.
Selection Notes
Select the MIC5014BN when driving N-channel enhancement-mode MOSFETs in high-side or low-side topologies requiring a wide input voltage range. It is suitable for applications prioritizing low static power consumption due to its 100µA max supply current. Choose this over complementary P-channel solutions if higher efficiency and lower Rds(on) are required via N-channel devices.
Part Context
The MIC5014BN belongs to the MIC5014/5015 family of MOSFET drivers. These devices are engineered for cost-sensitive applications requiring reliable gate drive for power switches. The MIC5014 specifically handles single-ended inputs, while the MIC5015 offers differential input capability. Both share similar electrical characteristics and package options.
Replacement Considerations
Direct substitutes include the MIC5015BN for differential input requirements within the same package and thermal profile. Verify pin compatibility and electrical specifications against original datasheets before substitution.
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