MIEB101W1200EH

MIEB101W1200EH

$123.52
  • Description:IGBT MODULE 1200V 183A 630W E3
  • Series:-

SKU:527b0c0d68d8 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE 1200V 183A 630W E3
  • Series:-
  • Mfr:IXYS
  • Package:Box
  • IGBT Type:-
  • Configuration:Three Phase Inverter
  • Vce(on) (Max) @ Vge, Ic:2.2V @ 15V, 100A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:E3
  • Supplier Device Package:E3
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):183 A
  • Power - Max:630 W
  • Current - Collector Cutoff (Max):300 µA
  • Input Capacitance (Cies) @ Vce:7.43 nF @ 25 V

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MIEB101W1200EH

Overview

The MIEB101W1200EH is a six-pack SPT IGBT module manufactured by IXYS. It features a maximum collector-emitter voltage (Vceo) of 1.2 kV and a continuous collector current of 85 A at 25°C. The device utilizes XPT technology to optimize switching performance in high-voltage applications. Key electrical parameters include a saturation voltage of 1.8 V, a power dissipation rating of 695 W, and a gate-emitter leakage current of 500 nA. The module operates within a temperature range of -40°C to +125°C and employs an E3-Pack housing with screw mount installation.

Feature Summary

  • Six-pack configuration for three-phase inverter topologies
  • XPT technology designed for high-speed hard-switching applications
  • Screw mount mechanical interface for secure thermal management

Applications

  • High-voltage fast power conversion systems
  • Industrial motor drives
  • Uninterruptible power supply (UPS) units

Procurement Notes

Verify the specific ordering suffix against the manufacturer datasheet to confirm exact electrical characteristics and packaging details. Ensure compatibility with existing thermal interface materials and mounting hardware specifications before integration into the final assembly design.

Selection Notes

Select this component for designs requiring robust high-voltage handling with optimized switching losses. Evaluate the thermal resistance requirements against the 695 W dissipation limit and ensure the drive circuitry supports the specified gate voltage thresholds for reliable operation.

Part Context

This part belongs to the IXYS six-pack SPT IGBT series, which integrates multiple discrete IGBTs and diodes into a single package. The series targets efficiency improvements in power electronics through advanced trench gate technology and optimized silicon structures.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 1.2 kV rating, 85 A current capacity, and E3-Pack form factor to maintain system compatibility.

MIEB101W1200EHMIEB101W1200EH
$123.52
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