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The MIEB101W1200EH is a six-pack SPT IGBT module manufactured by IXYS. It features a maximum collector-emitter voltage (Vceo) of 1.2 kV and a continuous collector current of 85 A at 25°C. The device utilizes XPT technology to optimize switching performance in high-voltage applications. Key electrical parameters include a saturation voltage of 1.8 V, a power dissipation rating of 695 W, and a gate-emitter leakage current of 500 nA. The module operates within a temperature range of -40°C to +125°C and employs an E3-Pack housing with screw mount installation.
Verify the specific ordering suffix against the manufacturer datasheet to confirm exact electrical characteristics and packaging details. Ensure compatibility with existing thermal interface materials and mounting hardware specifications before integration into the final assembly design.
Select this component for designs requiring robust high-voltage handling with optimized switching losses. Evaluate the thermal resistance requirements against the 695 W dissipation limit and ensure the drive circuitry supports the specified gate voltage thresholds for reliable operation.
This part belongs to the IXYS six-pack SPT IGBT series, which integrates multiple discrete IGBTs and diodes into a single package. The series targets efficiency improvements in power electronics through advanced trench gate technology and optimized silicon structures.
Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 1.2 kV rating, 85 A current capacity, and E3-Pack form factor to maintain system compatibility.