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The MIMD10A-7-F is a pre-biased bipolar transistor array manufactured by Diodes Incorporated, featuring one NPN and one PNP transistor in a single surface-mount package. The device provides dual transistors with integrated biasing resistors to simplify circuit design. It operates with a maximum collector-emitter breakdown voltage of 50V. The NPN transistor supports a continuous collector current of 100mA, while the PNP transistor supports 500mA. The unit utilizes an SOT-363 or SOT-666 package configuration for compact mounting.
Verify component status prior to procurement as this specific part number is listed as obsolete and no longer manufactured by Diodes Incorporated. Confirm availability through authorized distributors for remaining stock or consider equivalent active series replacements. Ensure all technical specifications match the target application requirements before finalizing any purchase orders.
Select this component when a compact solution for both NPN and PNP switching is required within a single footprint. The integrated resistor network reduces external component count and board space. Verify that the 50V voltage rating and current limits meet the specific load conditions of the intended design application.
This component belongs to the family of pre-biased bipolar transistor arrays offered by Diodes Incorporated. These devices are designed to replace discrete transistor and resistor combinations, thereby reducing assembly time and improving reliability in high-volume production environments.
Public confirmed substitute part numbers are not available in the provided documentation due to the obsolete status of the MIMD10A-7-F. Engineers should consult manufacturer datasheets for active equivalents in the MIMD series.