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The MIW30N65AH1Y-BP is a Trench and Field Stop IGBT manufactured by Micro Commercial Components (MCC). It features a collector-emitter breakdown voltage of 650 V and a continuous DC collector current of 30 A at 25°C. The device operates with a maximum junction temperature of 175°C and offers a short circuit withstand time of 5 μs. Key electrical parameters include a saturation voltage of 1.95 V to 2.40 V at 30 A, gate charge of 0.15 μC, and switching energies of 1.05 mJ (turn-on) and 0.49 mJ (turn-off) at 25°C. It utilizes a TO-247AB package.
Verify authenticity through authorized MCC distributors or direct purchase from the manufacturer. Counterfeit components are prevalent; ensure traceability and quality standards are met. Confirm RoHS compliance via the BP suffix. Check for updated datasheet revisions before integration.
Select based on 650V blocking capability and 30A continuous current requirements. Consider thermal resistance values for heatsink design. Evaluate switching energy losses against operating frequency. Ensure gate drive voltage aligns with the specified 15V threshold for optimal performance.
This component belongs to the MIW30N65AH1Y series of N-channel IGBTs. It is designed for high-efficiency power switching applications requiring robust performance under high thermal stress. The TO-247AB package facilitates efficient heat dissipation.
Direct substitutes must match the 650V/30A rating and TO-247AB package. Verify pinout compatibility and thermal characteristics. Cross-reference specific switching times and saturation voltages to ensure circuit performance parity.
The device supports a short circuit withstand time of 5 microseconds.
The typical gate charge is 0.15 μC under standard test conditions.
Yes, the IGBT features a positive temperature coefficient for stable parallel operation.