MIW30N65AH1Y-BP

MIW30N65AH1Y-BP

$2.13
  • Description:IGBT TRENCH FS 650V 60A TO-247AB
  • Series:-

SKU:2738e29ee438 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 60A TO-247AB
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Reel (TR)
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):60 A
  • Current - Collector Pulsed (Icm):120 A
  • Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 30A
  • Power - Max:187 W
  • Switching Energy:1.05mJ (on), 490µJ (off)
  • Input Type:Standard
  • Gate Charge:150 nC
  • Td (on/off) @ 25°C:8ns/80ns
  • Test Condition:400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr):42 ns
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AB
  • Grade:-
  • Qualification:-

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MIW30N65AH1Y-BP

Overview

The MIW30N65AH1Y-BP is a Trench and Field Stop IGBT manufactured by Micro Commercial Components (MCC). It features a collector-emitter breakdown voltage of 650 V and a continuous DC collector current of 30 A at 25°C. The device operates with a maximum junction temperature of 175°C and offers a short circuit withstand time of 5 μs. Key electrical parameters include a saturation voltage of 1.95 V to 2.40 V at 30 A, gate charge of 0.15 μC, and switching energies of 1.05 mJ (turn-on) and 0.49 mJ (turn-off) at 25°C. It utilizes a TO-247AB package.

Feature Summary

  • Trench and Field Stop technology for low switching losses
  • Positive temperature coefficient for parallel operation stability
  • High ruggedness with 5 μs short circuit capability
  • Maximum junction temperature rating of 175°C

Applications

  • Induction heating systems
  • Switched-mode power supplies
  • Motor control applications

Procurement Notes

Verify authenticity through authorized MCC distributors or direct purchase from the manufacturer. Counterfeit components are prevalent; ensure traceability and quality standards are met. Confirm RoHS compliance via the BP suffix. Check for updated datasheet revisions before integration.

Selection Notes

Select based on 650V blocking capability and 30A continuous current requirements. Consider thermal resistance values for heatsink design. Evaluate switching energy losses against operating frequency. Ensure gate drive voltage aligns with the specified 15V threshold for optimal performance.

Part Context

This component belongs to the MIW30N65AH1Y series of N-channel IGBTs. It is designed for high-efficiency power switching applications requiring robust performance under high thermal stress. The TO-247AB package facilitates efficient heat dissipation.

Replacement Considerations

Direct substitutes must match the 650V/30A rating and TO-247AB package. Verify pinout compatibility and thermal characteristics. Cross-reference specific switching times and saturation voltages to ensure circuit performance parity.

FAQ

What is the maximum short circuit withstand time?

The device supports a short circuit withstand time of 5 microseconds.

What is the typical gate charge value?

The typical gate charge is 0.15 μC under standard test conditions.

Does the device exhibit positive temperature coefficients?

Yes, the IGBT features a positive temperature coefficient for stable parallel operation.

MIW30N65AH1Y-BPMIW30N65AH1Y-BP
$2.13
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