MJW18020

Single Bipolar Transistors Overview

The MJW18020 is a PNP silicon power transistor manufactured by onsemi, designed for high-power audio output applications. It utilizes perforated emitter technology to achieve high current gain and low saturation voltage. The device is housed in a TO-247 package with an isolated collector. Key electrical ratings include a maximum collector-emitter voltage of 250 V, a continuous collector current of 16 A, and a total power dissipation of 200 W.

Single Bipolar Transistors Feature Summary

• Perforated emitter technology for enhanced performance
• High DC current gain characteristics
• Low saturation voltage for efficiency

Single Bipolar Transistors Applications

• High power audio output stages
• Power amplifier circuits

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet revision and ordering suffix when sourcing. Confirm that the component matches the required PNP configuration and TO-247 package style. Ensure compliance with relevant environmental standards if applicable to the design requirements.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring robust PNP switching or amplification at high voltages. Consider thermal management due to the 200 W power rating. Verify compatibility with driver circuits given the current gain specifications.

Single Bipolar Transistors Part Context

This part belongs to the MJW series of silicon power transistors from onsemi. The series includes complementary NPN and PNP devices, such as the MJW18019 (NPN), designed specifically for high-fidelity audio power amplification. These transistors are characterized by their ability to handle significant power loads in through-hole packages.

Single Bipolar Transistors Replacement Considerations

The complementary NPN counterpart is the MJW18019. For direct replacement, verify pinout compatibility and ensure the substitute meets the 250 V and 16 A ratings.